Patents by Inventor Albert M. Lin

Albert M. Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4676847
    Abstract: A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation. By providing a silicon dioxide diffusion control layer, and a polysilicon source layer that incorporates the boron, well-controlled boron doping over a wide concentration range can be obtained. Control of the doping transfer can be obtained by the choice of ambients, either dry or steam. Furthermore, removal of the silicon dioxide and polysilicon layers following the doping process is facilitated due to the etch selectivity possible between SiO.sub.2 and Si. If desired, the layers may remain on the silicon body.
    Type: Grant
    Filed: April 29, 1986
    Date of Patent: June 30, 1987
    Assignee: American Telephone and Telegraph Company AT&T Bell Laboratories
    Inventor: Albert M. Lin
  • Patent number: 4604150
    Abstract: A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation. By providing a silicon dioxide diffusion control layer, and a polysilicon source layer that incorporates the boron, well-controlled boron doping over a wide concentration range can be obtained. Control of the doping transfer can be obtained by the choice of ambients, either dry or steam. Furthermore, removal of the silicon dioxide and polysilicon layers following the doping process is facilitated due to the etch selectivity possible between SiO.sub.2 and Si. If desired, the layers may remain on the silicon body.
    Type: Grant
    Filed: January 25, 1985
    Date of Patent: August 5, 1986
    Assignee: AT&T Bell Laboratories
    Inventor: Albert M. Lin
  • Patent number: 4581222
    Abstract: An immunoassay method for detection of antigen is disclosed. The method employs complement mediated lysis of vesicles loaded with In-111 or other gamma-emitting cation, and quantitative detection of the lysis by gamma-ray perturbed angular correlation (PAC) spectroscopy. The vesicles are labeled with a substance competitive to the antigen to be measured, and the concentration of the antigen in the sample measured by assessing the diminution in lysis due to the presence of the competing antigen.The method may also be used to assess the immunologic competence of a subject by injecting suitably sensitized vesicles and monitoring the in vivo lysis pattern by (PAC).
    Type: Grant
    Filed: February 9, 1983
    Date of Patent: April 8, 1986
    Assignee: California Institute of Technology
    Inventors: John D. Baldeschwieler, Ronald C. Gamble, Albert M. Lin, George W. Tin