Patents by Inventor Albert Mark

Albert Mark has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of metal nitride oxide semiconductor (MNOS) by ion implantation of oxygen through a silicon nitride layer
    Patent number: 4105805
    Abstract: A layer of silicon nitride (Si.sub.3 N.sub.4) is deposited on a silicon substrate. A mask provided with windows representing device structures is then formed over the silicon nitride layer. Oxygen is then implanted through the window portion of the silicon nitride layer into the Si.sub.3 N.sub.4 /Si interface region to form a tunneling insulator interface layer of silicon dioxide (SiO.sub.2). The final structure is heat treated and then has the form Si.sub.3 N.sub.4 /SiO.sub.2 /Si. It can be made into a metal nitride oxide semiconductor (MNOS) field effect transistor device by conventional diffusion, ion implant and metallization processes.
    Type: Grant
    Filed: December 29, 1976
    Date of Patent: August 8, 1978
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: William B. Glendinning, Albert Mark