Abstract: An over voltage protection device on a radio frequency identification tag or in a radio frequency receiver comprises electro-magnetic coupling means between a base station and the radio frequency identification tag or radio frequency receiver. At least one ferroelectric capacitor is electrically connected to the coupling means. As long as the voltage across the ferroelectric capacitor remains below its coercive voltage, its capacitance will be linear and the tag or radio frequency receiver will behave normally. However, if the voltage across the ferroelectric capacitor exceeds the coercive voltage, the ferroelectric capacitance will experience polarization reversal and exhibit its non-linear and dissipative behavior. Connecting the ferroelectric capacitor in suitable ways to the coupling means, will result in a dumping of the voltage transferred to the electronics present on the tag or radio frequency receiver. This electronics is then protected against excessive voltages that could cause it damage.

Abstract: A data handling device is provided with a data memory (10) with an address input and a data output, for outputting multi-bit words. The data memory (10) has a structure that gives rise to potential errors at correlated positions in words from a group of words. An erasure memory unit (16) stores bit position information associated with a group of the words, and outputs the bit position information when a word from the group for which bit position information is stored is addressed in the data memory (10). An error correction and detection unit (12) is arranged to correct words from the data memory (10), using error erasure for bits at bit positions selected by the bit position information from the erasure memory unit (16) for the groups to which the words belong.

Abstract: A non-volatile ferroelectric memory device is proposed which comprises a combination of an organic ferroelectric polymer with an organic ambipolar semiconductor. The devices of the present invention are compatible with—and fully exploit the benefits of polymers, i.e. solution processing, low-cost, low temperature layer deposition and compatibility with flexible substrates.

Abstract: Ferroelectric polymers such as for example copolymers of vinylidenedifluoride (VDF) and trifluoroethylene (TrFE) may be patterned by spincoating the ferroelectric polymer layer from a ferroelectric spincoating solution, which comprises a photosensitive crosslinker, onto a substrate followed by irradiating the ferroelectric polymer layer through a mask and removing the unexposed parts of the ferroelectric polymer layer.