Abstract: In one aspect, a cathodoluminescence (CL) spectroscopic tomography device includes a sample stage to support a sample. An electron beam source scans an electron beam over the sample to yield light emission by the sample. A reflective element directs the light emission by the sample to a light detector. A controller controls operation of the sample stage, the electron beam source, and the light detector. In one aspect, a CL spectroscopic tomography device includes an electron beam source which directs an electron beam at an object to yield an emission by the object. A detector detects the emission. A controller receives information from the detector related to the detected emission. The controller derives a two-dimensional (2D) CL map from the information related to the detected emission, and derives a three-dimensional (3D) CL tomogram from the 2D CL map.

Abstract: In one aspect, a cathodoluminescence (CL) spectroscopic tomography device includes a sample stage to support a sample. An electron beam source scans an electron beam over the sample to yield light emission by the sample. A reflective element directs the light emission by the sample to a light detector. A controller controls operation of the sample stage, the electron beam source, and the light detector. In one aspect, stage a CL spectroscopic tomography device includes an electron beam source which directs an electron beam at an object to yield an emission by the object. A detector detects the emission. A controller receives information from the detector related to the detected emission. The controller derives a two-dimensional (2D) CL map from the information related to the detected emission, and derives a three-dimensional (3D) CL tomogram from the 2D CL map.

Abstract: An integrated plasmonic sensing device is described wherein the integrated device comprises: at least one optical source comprising a first conductive layer and a second conductive layer, and a optical active layer between at least part of said first and second conductive layers; at least one nanocavity extending through said first and second conductive layers and said optical active layer, wherein said optical source is configured to generate surface plasmon modes suitable for optically activating one or more resonances in said nanocavity; and, at least one optical detector comprising at least one detection region formed in said substrate in the vicinity of said nanocavity resonator, wherein said optical detector is configured to sense optically activated resonances in said nanocavity.

Abstract: A thin-film broadband antireflection layer for use with an optical element or an optoelectronic device is described, wherein the thin-film broadband antireflection layer comprises: at least a thin-film dielectric layer; and, at least one array of nanoparticles disposed onto or in said thin-film dielectric layer, wherein the dielectric constant of said nanoparticles is substantially distinct from distinct from the dielectric constant of said dielectric layer.

Abstract: An integrated plasmonic sensing device is described wherein the integrated device comprises: at least one optical source comprising a first conductive layer and a second conductive layer, and a optical active layer between at least part of said first and second conductive layers; at least one nanocavity extending through said first and second conductive layers and said optical active layer, wherein said optical source is configured to generate surface plasmon modes suitable for optically activating one or more resonances in said nanocavity; and, at least one optical detector comprising at least one detection region formed in said substrate in the vicinity of said nanocavity resonator, wherein said optical detector is configured to sense optically activated resonances in said nanocavity.

Abstract: A photovoltaic cell (100) is described comprising a semiconductor layer (102), preferably thin-film semiconducting layer, of a first conductivity type provided on a support substrate (104). A plasmon resonance generating metallic structure (106) is provided on the semiconductor layer for resonantly coupling light into the absorbing layer and transporting photo-induced charge carriers out of the absorbing layer, wherein the contact structure extends over a substantial part of the front side of the semiconductor layer and wherein the contact structure comprises a plurality of metallic finger in contact with the semiconductor layer, the dimensions of the cross-section of each strip being smaller than 300 nm.

Abstract: A solar cell includes a nano-scale patterned back contact layer; a spacer layer on the nano-scale patterned back contact layer; a semiconductor layer on the spacer layer; and a light transmissive first electrode on the semiconductor layer.

Abstract: A material for use in optical amplifiers is described. The material includes an oxide glass substrate material, a rare earth dopant and a silver dopant. The silver dopant enhances photoluminescence of the rare earth dopants in the oxide glass. The silver can be introduced into the glass using an ion exchange process or by ion implantation. Oxide glass doped with erbium ions and silver ions provides a broad excitation band for photoluminescence of Er3+ in the visible and near ultraviolet. An amplifier material according to the present invention can be formed by ion implanting a rare earth ion, for example erbium, and doping with silver by an ion exchange method. Alternatively, the silver can be implanted into the material as well. The resulting silver dopant may be dispersed throughout the oxide glass primarily as ions as a result of the fabrication method.

Abstract: An infrared detector device having a PN junction formed by a first semiconductor material region doped with rare earth ions and by a second semiconductor material region of opposite doping type. The detector device comprises a waveguide formed by a projecting structure extending on a substrate, including a reflecting layer and laterally delimited by a protection and containment oxide region. At least one portion of the waveguide is formed by the PN junction and has an end fed with light to be detected. The detector device has electrodes disposed laterally to and on the waveguide to enable efficient gathering of charge carriers generated by photoconversion.

Abstract: An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.

Abstract: An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.

Abstract: Disclosed is apparatus comprising an optically pumped optical gain device that comprises a rare earth (RE)-doped planar waveguide with non-uniform dopant distribution in the core of the waveguide. The RE ions are advantageously distributed such that the ions are concentrated in a core region in which the mode intensity of both signal radiation and pump radiation is relatively high. In preferred embodiments of a single mode planar waveguide according to the invention the RE ions are substantially concentrated in the central core region. A method of making the disclosed apparatus is also disclosed. The method involves implantation of RE ions into the core region.