Abstract: A method of fabricating a film of magnetic nanocomposite particles including depositing isolated clusters of magnetic nanoparticles onto a substrate surface and coating the isolated clusters of magnetic nanoparticles with an insulator coating. The isolated clusters of magnetic nanoparticles have a dimension in the range between 1 and 300 nanometers and are separated from each other by a distance in the range between 1 and 50 nanometers. By employing PVD, ablation, and CVD techniques the range of useful film thicknesses is extended to 10-1000 nm, suitable for use in wafer based processing. The described methods for depositing the magnetic nanocomposite thin films are compatible with conventional IC wafer and Integrated Passive Device fabrication.

Abstract: A method of fabricating a film of magnetic nanocomposite particles including depositing isolated clusters of magnetic nanoparticles onto a substrate surface and coating the isolated clusters of magnetic nanoparticles with an insulator coating. The isolated clusters of magnetic nanoparticles have a dimension in the range between 1 and 300 nanometers and are separated from each other by a distance in the range between 1 and 50 nanometers. By employing PVD, ablation, and CVD techniques the range of useful film thicknesses is extended to 10-1000 nm, suitable for use in wafer based processing. The described methods for depositing the magnetic nanocomposite thin films are compatible with conventional IC wafer and Integrated Passive Device fabrication.

Abstract: A method of exposing a radiation-sensitive medium through a mask and using an imaging system having a given depth of focus to control for pattern dependent distortion. The steps comprise: providing the radiation-sensitive medium within the depth of focus of the imaging system; providing radiation to the radiation-sensitive medium through the mask; providing the radiation-sensitive medium fully outside the depth of focus of the imaging system; and providing radiation to the radiation-sensitive medium through the mask. Corrections are automatically made by providing the radiation-sensitive medium fully outside the depth of focus of the imaging system, since in that regime the mask operates as a grey-scale mask, with the amount of light passing through any region of the mask dependent on the transmission of the masking pattern in that region.

Abstract: A semiconductor device memory array formed on a semiconductor substrate comprising a multiplicity of field effect transistor DRAM devices disposed in array is disclosed. Each of the DRAM devices is paired with a non-volatile EEPROM cell and the EEPROM cells are disposed in a shallow trench in the semiconductor substrate running between the DRAM devices such that each DRAM-EEPROM pair shares a common drain diffusion. The EEPROM cells are arranged in the trench such that there are discontinuous laterally disposed floating gate polysilicon electrodes and continuous horizontally disposed program and recall gate polysilicon electrodes. The floating gate is separated from the program and recall gates by a silicon rich nitride. The array of the invention provides high density shadow RAMs. Also disclosed are methods for the fabrication of devices of the invention.

Abstract: A semiconductor device memory array formed on a semiconductor substrate comprising a multiplicity of field effect transistor DRAM devices disposed in array is disclosed. Each of the DRAM devices is paired with a non-volatile EEPROM cell and the EEPROM cells are disposed in a shallow trench in the semiconductor substrate running between the DRAM devices such that each DRAM-EEPROM pair shares a common drain diffusion. The EEPROM cells are arranged in the trench such that there are discontinuous laterally disposed floating gate polysilicon electrodes and continuous horizontally disposed program and recall gate polysilicon electrodes. The floating gate is separated from the program and recall gates by a silicon rich nitride. The array of the invention provides high density shadow RAMs. Also disclosed are methods for the fabrication of devices of the invention.

Abstract: A method for forming a master mold for optical storage disks includes thermally growing an oxide or nitride layer on a semiconductor wafer. The thermally grown layer is then coated with a photoresist. The photoresist is exposed to a laser beam to form a data pattern and developed. The oxide or nitride under the developed pattern is etched and the photoresist stripped to provide a semiconductor master mold for optical disks.

Abstract: This describes a method for electrically evaluating the overlay error of a photolithographic tool. In this process a reusable substrate bearing a fixed reference mark has a photolithographic tool defined metal liftoff pattern formed thereon to provide a pair of conductive lines by measuring the relative resistance of the lines with respect to one another the alignment of the tool defined pattern with regard to the reference mark may be determined and thus the overlay error of the tool established.The reference mask is formed of an L-shaped recess in a substrate so that when a metal structure is deposited on the surface of the substrate across the mask it will be made discontinuous by the mark.

Abstract: The present invention describes conformable masking techniques which can be successfully made and used in a practical manufacturing environment while providing increased resolution of photolithographic images while eliminating all manner of defects that might presently be encountered in the masks currently used in the semiconductor industry.In the present invention a body is first coated with a positive photoresist overcoated with a conformable mask which is exposed through a fixed mask and developed to define a replica of the fixed mask, together with all its defects. The underlying photoresist is then exposed to light through developed openings in the conformable mask. The conformable mask is then stripped and a new conformable mask laid down. This new conformable mask is now exposed through a second fixed mask having the same image as the first fixed mask, but presumably with different defects and developed to define a replica of the second mask.