Patents by Inventor Albert Senes

Albert Senes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Monolithic overvoltage protection device
    Patent number: 5245499
    Abstract: A protection device against overvoltages liable to occur between two supply terminals (A, B) comprises between the supply terminals, an avalanche triggered thyristor (6) having a determined break-over voltage (V.sub.BO) This system further comprises a zener diode (4) in parallel and reversely connected with the thyristor; the diode is selected so that its avalanche voltage (V.sub.BR) is lower than the break-over voltage of the thyristor and gets higher only for overvoltages having a higher duration or amplitude than a predetermined threshold.
    Type: Grant
    Filed: July 12, 1991
    Date of Patent: September 14, 1993
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventor: Albert Senes
  • Overvoltage protection device
    Patent number: 5233497
    Abstract: A protection device against overvoltages liable to occur between two supply terminals (A, B) comprises between the terminals, on the one hand, a thyristor (Th) and, on the other hand, first and second zener diodes in series. The anode of the first diode (D1) is connected to the cathode of the thyristor and the cathode of the second diode (D2) is connected to the anode of the thyristor, and a third zener diode (D3) is placed between the thyristor gate and the junction (10) of the first and second diodes. The third diode has an avalanche voltage higher than that of the first diode.
    Type: Grant
    Filed: July 12, 1991
    Date of Patent: August 3, 1993
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventors: Andre Bremond, Robert Pezzani, Albert Senes
  • Amplifying gate thyristor with gate turn-off (G.T.O.)
    Patent number: 4177478
    Abstract: The invention relates to an amplifying gate thyristor with gate turn-off (G.T.O.) for electric power switching. A P+ type conduction layer is disposed in the thickness of the base P1, forming a buried grate under the main emitter and penetrating down to an N layer designed to transmit to the base the negative pulses applied to the gate opening the thyristor.
    Type: Grant
    Filed: January 4, 1978
    Date of Patent: December 4, 1979
    Assignee: Alsthom-Atlantique
    Inventor: Albert Senes