Abstract: A multilayer Laue Lens includes a compensation layer formed in between a first multilayer section and a second multilayer section. Each of the first and second multilayer sections includes a plurality of alternating layers made of a pair of different materials. Also, the thickness of layers of the first multilayer section is monotonically increased so that a layer adjacent the substrate has a minimum thickness, and the thickness of layers of the second multilayer section is monotonically decreased so that a layer adjacent the compensation layer has a maximum thickness. In particular, the compensation layer of the multilayer Laue lens has an in-plane thickness gradient laterally offset by 90° as compared to other layers in the first and second multilayer sections, thereby eliminating the strict requirement of the placement error.

Abstract: A multilayer Laue Lens includes a compensation layer formed in between a first multilayer section and a second multilayer section. Each of the first and second multilayer sections includes a plurality of alternating layers made of a pair of different materials. Also, the thickness of layers of the first multilayer section is monotonically increased so that a layer adjacent the substrate has a minimum thickness, and the thickness of layers of the second multilayer section is monotonically decreased so that a layer adjacent the compensation layer has a maximum thickness. In particular, the compensation layer of the multilayer Laue lens has an in-plane thickness gradient laterally offset by 90° as compared to other layers in the first and second multilayer sections, thereby eliminating the strict requirement of the placement error.

Abstract: A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi2) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 ?m (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.

Abstract: A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi2) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 ?m (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.

Abstract: Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.

Abstract: The property of materials in the InP system, whereby helium ion or deuteron bombarded p-type material becomes highly resistive but n-type material remains relatively conductive, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.

Abstract: Helium-3 and helium-4 bombardment of InP over a fluence range of 10.sup.11 to 10.sup.16 ions/cm.sup.2 reproducibly forms highly resistive regions in both p-type and n-type single crystal material. Average peak resistivities are about 10.sup.9 ohm-cm for p-type InP and are about 10.sup.3 ohm-cm for n-type InP. High resistivity has also been produced in GaP, GaSb, GaAs, and InGaAs by helium bombardment. Stripe geometry lasers and planar photodiodes which incorporate helium-bombarded zones are described.