Patents by Inventor Albert T. Meeks

Albert T. Meeks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9006795
    Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: April 14, 2015
    Assignee: SanDisk 3D LLC
    Inventors: Xiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks
  • Publication number: 20140158974
    Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.
    Type: Application
    Filed: February 14, 2014
    Publication date: June 12, 2014
    Applicant: SanDisk 3D LLC
    Inventors: Xiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks
  • Patent number: 8686476
    Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: April 1, 2014
    Assignee: SanDisk 3D LLC
    Inventors: Xiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks
  • Patent number: 8350299
    Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: January 8, 2013
    Assignee: SanDisk 3D LLC
    Inventors: Xiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks
  • Patent number: 8314023
    Abstract: Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
    Type: Grant
    Filed: February 6, 2009
    Date of Patent: November 20, 2012
    Assignee: SanDisk 3D LLC
    Inventors: Xiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks
  • Publication number: 20100276660
    Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.
    Type: Application
    Filed: July 14, 2010
    Publication date: November 4, 2010
    Inventors: Xiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks
  • Patent number: 7781805
    Abstract: A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and by using a diode having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
    Type: Grant
    Filed: February 6, 2009
    Date of Patent: August 24, 2010
    Assignee: SanDisk 3D LLC
    Inventors: Xiaoyu Yang, Roy E. Scheurelein, Feng Li, Albert T. Meeks
  • Publication number: 20090140299
    Abstract: A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and by using a diode having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
    Type: Application
    Filed: February 6, 2009
    Publication date: June 4, 2009
    Applicant: SANDISK 3D LLC
    Inventors: Xiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks
  • Publication number: 20090141535
    Abstract: Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
    Type: Application
    Filed: February 6, 2009
    Publication date: June 4, 2009
    Applicant: SANDISK 3D LLC
    Inventors: Xiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks