Abstract: An integrated circuit device is disclosed, which integrated circuit device comprises at least a first external contact, a second external contact, and an input stage, connected with the external contacts and being configured to provide an internal operating voltage when an external voltage is applied to the external contacts. To allow easier handling at manufacture, test, assembly, and end use, the internal operating voltage has a predefined polarity, which predefined polarity is independent of the polarity of the external voltage.

Abstract: An integrated circuit device is disclosed, which integrated circuit device comprises at least a first external contact, a second external contact, and an input stage, connected with the external contacts and being configured to provide an internal operating voltage when an external voltage is applied to the external contacts. To allow easier handling at manufacture, test, assembly, and end use, the internal operating voltage has a predefined polarity, which predefined polarity is independent of the polarity of the external voltage.

Abstract: A memory array has memory elements of identical topology or footprint arranged in rows and columns. Some of the memory elements are EEPROM cells and other memory elements are read only memory cells but all are made using a mask set having the same length and width dimensions. In the mask set for EEPROMs a principal mask is used for formation of a depletion implant. In the case of one type of read-only memory element, this mask is mainly blocked, leading to formation of a transistor with a non-conductive channel between source and drain. In the case of another read only memory element, the same mask is unblocked, leading to formation of a transistor with a highly conductive or almost shorted channel between source and drain. These two read only memory elements are designated as logic one and logic zero. By having rows of read-only memory elements with rows of EEPROMs on the same chip, a more versatile memory array chip may be built without sacrificing chip space.

Abstract: A memory array has memory elements of identical topology or footprint arranged in rows and columns. Some of the memory elements are EEPROM cells and other memory elements are read only memory cells but all are made using a mask set having the same length and width dimensions. In the mask set for EEPROMs a principal mask is used for formation of a depletion implant. In the case of one type of read-only memory element, this mask is mainly blocked, leading to formation of a transistor with a non-conductive channel between source and drain. In the case of another read only memory element, the same mask is unblocked, leading to formation of a transistor with a highly conductive or almost shorted channel between source and drain. These two read only memory elements are designated as logic one and logic zero. By having rows of read-only memory elements with rows of EEPROMs on the same chip, a more versatile memory array chip may be built without sacrificing chip space.

Abstract: A self-adjusting PWM regulator which minimizes undershoot and overshoot conditions is disclosed. The regulator includes a charge pump, a voltage comparator circuit, and a latch circuit. The input of the voltage comparator circuit includes an output of the charge pump. The input of the latch circuit includes an output from the voltage comparator circuit. The latch circuit includes a pair of SR latches coupled to a pair of AND/OR gates. The latch circuit transmits a first signal to the charge pump to prevent an overshoot condition if the output from the voltage comparator circuit is in a first state, and transmits a second signal to prevent an undershoot condition if the output from the voltage comparator circuit is in a second state. This keeps the charge pump adjusted within the limits of its control.

Abstract: A self-adjusting PWM regulator which minimizes undershoot and overshoot conditions is disclosed. The regulator includes a charge pump, a voltage comparator circuit, and a latch circuit. The input of the voltage comparator circuit includes an output of the charge pump. The input of the latch circuit includes an output from the voltage comparator circuit. The latch circuit includes a pair of SR latches coupled to a pair of AND/OR gates. The latch circuit transmits a first signal to the charge pump to prevent an overshoot condition if the output from the voltage comparator circuit is in a first state, and transmits a second signal to prevent an undershoot condition if the output from the voltage comparator circuit is in a second state. This keeps the charge pump adjusted within the limits of its control.