Abstract: A checking mechanism for complete full-chip ESD protection circuit design and layout verification at layout level identifies all of both intentional and parasitic ESD devices contained in the design layout file and compiles a netlist. The checking mechanism then determines the critical operating parameters of the identified ESD devices and determines if the parasitic devices will negatively effect ESD protection performance. The checking mechanism then determines if the intentional devices meet design specifications; eliminates parasitic devices which will not negatively effect ESD protection from the netlist, and retains those parasitic devices which may lead to ESD protection malfunction. Design layout verification and faults are then reported.

Abstract: A checking mechanism for complete full-chip ESD protection circuit design and layout verification at layout level identifies all of both intentional and parasitic ESD devices contained in the design layout file and compiles a netlist. The checking mechanism then determines the critical operating parameters of the identified ESD devices and determines if the parasitic devices will negatively effect ESD protection performance. The checking mechanism then determines if the intentional devices meet design specifications; eliminates parasitic devices which will not negatively effect ESD protection from the netlist, and retains those parasitic devices which may lead to ESD protection malfunction. Design layout verification and faults are then reported.

Abstract: An all-mode, bonding pad-oriented ESD (electrostatic discharge) protection structure, protects ICs against ESD pulses of all modes in all directions. A unique quasi-symmetrical layout design is devised to improve ESD structure. Physical symmetry and rounded layout provide uniform current and thermal distribution as well as symmetrical electrical operation characteristics. The ESD structure allows tunable triggering voltage, low holding voltage, low impedance, low leakage, fast response time and low parasitic effect. The ESD structure can easily be placed under or surrounding a bonding pad and consumes little extra silicon. The ESD structure can be implemented in commercial BiCMOS processes and is suitable for multiple-supply, mixed-signal, parasitic-sensitive RF and high-pin-count ICs.

Abstract: An all-mode, bonding pad-oriented ESD (electrostatic discharge) protection structure, protects ICs against ESD pulses of all modes in all directions. A unique quasi-symmetrical layout design is devised to improve ESD structure. Physical symmetry and rounded layout provide uniform current and thermal distribution as well as symmetrical electrical operation characteristics. The ESD structure allows tunable triggering voltage, low holding voltage, low impedance, low leakage, fast response time and low parasitic effect. The ESD structure can easily be placed under or surrounding a bonding pad and consumes little extra silicon. The ESD structure can be implemented in commercial BiCMOS processes and is suitable for multiple-supply, mixed-signal, parasitic-sensitive RF and high-pin-count ICs.

Abstract: An overvoltage/overcurrent electrostatic discharge protection single circuit structure for Integrated Circuits protects on all paths and polarities between In/Out, Supply, and Ground pins. The structure is built on the chip substrate with an N well with three P Diffusions therein each containing N+ and P+ diffusions therein to form 6 transistors and 8 parasitic resistors to yield 5 thyristors. The structure provides very fast, symmetrical, full protection while using minimal chip area.