Patents by Inventor Alberto Escobar

Alberto Escobar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strain-compensated field effect transistor and associated method of forming the transistor
    Patent number: 8420468
    Abstract: Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-dependent carrier mobility change to ensure that drive current remains approximately constant or at least within a predetermined range in response to temperature variations. This opposite strain-dependent carrier mobility change is provided by a straining structure that is configured to impart a temperature-dependent amount of a pre-selected strain type on the channel region. Also disclosed are embodiments of an associated method of forming the field effect transistor.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: April 16, 2013
    Assignee: International Business Machines Corporation
    Inventors: Alberto Escobar, Brian J. Greene, Edward J. Nowak
  • STRAIN-COMPENSATED FIELD EFFECT TRANSISTOR AND ASSOCIATED METHOD OF FORMING THE TRANSISTOR
    Publication number: 20110312143
    Abstract: Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-dependent carrier mobility change to ensure that drive current remains approximately constant or at least within a predetermined range in response to temperature variations. This opposite strain-dependent carrier mobility change is provided by a straining structure that is configured to impart a temperature-dependent amount of a pre-selected strain type on the channel region. Also disclosed are embodiments of an associated method of forming the field effect transistor.
    Type: Application
    Filed: August 30, 2011
    Publication date: December 22, 2011
    Applicant: International Business Machines Corporation
    Inventors: Alberto Escobar, Brian J. Greene, Edward J. Nowak
  • Field effect transistor incorporating at least one structure for imparting temperature-dependent strain on the channel region and associated method of forming the transistor
    Patent number: 8030687
    Abstract: Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-dependent carrier mobility change to ensure that drive current remains approximately constant or at least within a predetermined range in response to temperature variations. This opposite strain-dependent carrier mobility change is provided by a straining structure that is configured to impart a temperature-dependent amount of a pre-selected strain type on the channel region. Also disclosed are embodiments of an associated method of forming the field effect transistor.
    Type: Grant
    Filed: June 19, 2007
    Date of Patent: October 4, 2011
    Assignee: International Business Machines Corporation
    Inventors: Alberto Escobar, Brian J. Greene, Edward J. Nowak
  • STRAIN-COMPENSATED FIELD EFFECT TRANSISTOR AND ASSOCIATED METHOD OF FORMING THE TRANSISTOR
    Publication number: 20080315264
    Abstract: Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-dependent carrier mobility change to ensure that drive current remains approximately constant or at least within a predetermined range in response to temperature variations. This opposite strain-dependent carrier mobility change is provided by a straining structure that is configured to impart a temperature-dependent amount of a pre-selected strain type on the channel region. Also disclosed are embodiments of an associated method of forming the field effect transistor.
    Type: Application
    Filed: June 19, 2007
    Publication date: December 25, 2008
    Inventors: Alberto Escobar, Brian J. Greene, Edward J. Nowak