Abstract: A method for testing the generation of scattered light by photolithographic imaging devices is disclosed. In one embodiment, measuring structures that are to be imaged in a photoresist are provided in the vicinity of deliberately structured sections that cause scattered light in the imaging device to be tested, in a photomask. The scattered light which is caused as a function of the configuration of the sections acts on the measurement structures in the photoresist and leads to changes in their CD, which is measured in the photoresist, and allows conclusions to be drawn about the scattered-light behavior of the imaging device. The method is suitable for specifically testing the lens system of the imaging device.