Abstract: Devices and methods comprising a switch and an overload detection are disclosed. When an overload detection is detected, a first retry scheme followed by a second retry scheme different from the first retry scheme may be applied. If the overload condition persists, the switch may be disabled.

Abstract: Devices and methods comprising a switch and an overload detection are disclosed. When an overload detection is detected, a first retry scheme followed by a second retry scheme different from the first retry scheme may be applied. If the overload condition persists, the switch may be disabled.

Abstract: A semiconductor chip includes at least one power semiconductor switch configured to activate and deactivate current conduction from a first supply terminal, which is connected to a first supply line that provides an unstabilized first supply voltage, to the at least one output terminal in accordance with a respective control signal. In operation, the unstabilized first supply voltage is monitored and an under-voltage is signaled when the unstabilized first supply voltage falls below a first threshold value. The first supply terminal is short circuited with a third terminal when the an under-voltage is signaled.

Abstract: A semiconductor chip includes at least one power semiconductor switch configured to activate and deactivate current conduction from a first supply terminal, which is connected to a first supply line that provides an unstabilized first supply voltage, to the at least one output terminal in accordance with a respective control signal. In operation, the unstabilized first supply voltage is monitored and an under-voltage is signaled when the unstabilized first supply voltage falls below a first threshold value. The first supply terminal is short circuited with a third terminal when the an under-voltage is signaled.

Abstract: A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.

Abstract: A system and method for limiting current oscillation in power supplies. A method for operating a power supply comprises entering a current limitation mode, setting a current limit for a current flowing through a power switch of the power supply, and in response to determining a current limit has changed from a high value to a low value or detecting an occurrence of a fault condition, setting the current limit to the low value, and locking the current limit so that the current limit does not change. The method further comprises providing a current to a load coupled to the power supply.

Abstract: A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.

Abstract: A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.

Abstract: A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.

Abstract: A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.

Abstract: A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.

Abstract: A method and an apparatus for monitoring a load driven by a power semiconductor switch. The method may comprise, for example: driving a control electrode of the power semiconductor switch, in such a way that a rise in the load current through the power semiconductor switch is effected after a delay time; generating a diagnostic current flowing through the load, wherein the diagnostic current brings about a voltage drop across the load before the delay time has elapsed; and evaluating the voltage drop across the load before the delay time has elapsed.

Abstract: A system and method for limiting current oscillation in power supplies. A method for operating a power supply comprises entering a current limitation mode, setting a current limit for a current flowing through a power switch of the power supply, and in response to determining a current limit has changed from a high value to a low value or detecting an occurrence of a fault condition, setting the current limit to the low value, and locking the current limit so that the current limit does not change. The method further comprises providing a current to a load coupled to the power supply.

Abstract: Some embodiments discussed relate to an apparatus comprising a temperature sensor disposed in an integrated circuit, the temperature sensor including a bipolar transistor having a collector coupled to a portion of a substrate of the integrated circuit, and a bandgap reference circuit configured to generate a reference voltage, and a comparator coupled to the temperature sensor and the bandgap reference circuit, the comparator configured to receive a first voltage from the emitter of the bipolar transistor and the reference voltage from the bandgap reference circuit and generate a switch-off signal based on a voltage difference between the first voltage and the reference voltage.

Abstract: A method and an apparatus for monitoring a load driven by a power semiconductor switch. The method may comprise, for example: driving a control electrode of the power semiconductor switch, in such a way that a rise in the load current through the power semiconductor switch is effected after a delay time; generating a diagnostic current flowing through the load, wherein the diagnostic current brings about a voltage drop across the load before the delay time has elapsed; and evaluating the voltage drop across the load before the delay time has elapsed.

Abstract: Some embodiments discussed relate to an apparatus comprising a temperature sensor disposed in an integrated circuit, the temperature sensor including a bipolar transistor having a collector coupled to a portion of a substrate of the integrated circuit, and a bandgap reference circuit configured to generate a reference voltage, and a comparator coupled to the temperature sensor and the bandgap reference circuit, the comparator configured to receive a first voltage from the emitter of the bipolar transistor and the reference voltage from the bandgap reference circuit and generate a switch-off signal based on a voltage difference between the first voltage and the reference voltage.