Patents by Inventor Alberto Zanardi

Alberto Zanardi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9887532
    Abstract: Devices and methods comprising a switch and an overload detection are disclosed. When an overload detection is detected, a first retry scheme followed by a second retry scheme different from the first retry scheme may be applied. If the overload condition persists, the switch may be disabled.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: February 6, 2018
    Assignee: Infineon Technologies AG
    Inventors: Christian Djelassi, Hans-Peter Kreuter, Robert Illing, Alexander Mayer, Luca Petruzzi, Bernhard Auer, Markus Ladurner, Alberto Zanardi
  • Publication number: 20160204593
    Abstract: Devices and methods comprising a switch and an overload detection are disclosed. When an overload detection is detected, a first retry scheme followed by a second retry scheme different from the first retry scheme may be applied. If the overload condition persists, the switch may be disabled.
    Type: Application
    Filed: January 14, 2015
    Publication date: July 14, 2016
    Inventors: Christian Djelassi, Hans-Peter Kreuter, Robert Illing, Alexander Mayer, Luca Petruzzi, Bernhard Auer, Markus Ladurner, Alberto Zanardi
  • Patent number: 8946943
    Abstract: A semiconductor chip includes at least one power semiconductor switch configured to activate and deactivate current conduction from a first supply terminal, which is connected to a first supply line that provides an unstabilized first supply voltage, to the at least one output terminal in accordance with a respective control signal. In operation, the unstabilized first supply voltage is monitored and an under-voltage is signaled when the unstabilized first supply voltage falls below a first threshold value. The first supply terminal is short circuited with a third terminal when the an under-voltage is signaled.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: February 3, 2015
    Assignee: Infineon Technologies AG
    Inventors: Luca Petruzzi, Alberto Zanardi
  • Publication number: 20130027114
    Abstract: A semiconductor chip includes at least one power semiconductor switch configured to activate and deactivate current conduction from a first supply terminal, which is connected to a first supply line that provides an unstabilized first supply voltage, to the at least one output terminal in accordance with a respective control signal. In operation, the unstabilized first supply voltage is monitored and an under-voltage is signaled when the unstabilized first supply voltage falls below a first threshold value. The first supply terminal is short circuited with a third terminal when the an under-voltage is signaled.
    Type: Application
    Filed: July 27, 2011
    Publication date: January 31, 2013
    Applicant: Infineon Technologies AG
    Inventors: Luca Petruzzi, Alberto Zanardi
  • Patent number: 8296093
    Abstract: A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.
    Type: Grant
    Filed: December 30, 2009
    Date of Patent: October 23, 2012
    Assignee: Infineon Technologies AG
    Inventors: Alberto Zanardi, Erich Scheikl, Robert Illing, Herbert Hopfgartner
  • Patent number: 8093763
    Abstract: A system and method for limiting current oscillation in power supplies. A method for operating a power supply comprises entering a current limitation mode, setting a current limit for a current flowing through a power switch of the power supply, and in response to determining a current limit has changed from a high value to a low value or detecting an occurrence of a fault condition, setting the current limit to the low value, and locking the current limit so that the current limit does not change. The method further comprises providing a current to a load coupled to the power supply.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: January 10, 2012
    Assignee: Infineon Technologies AG
    Inventors: Markus Ladurner, Alberto Zanardi, Robert Illing
  • Patent number: 8045310
    Abstract: A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.
    Type: Grant
    Filed: December 30, 2009
    Date of Patent: October 25, 2011
    Assignee: Infineon Technologies AG
    Inventors: Alberto Zanardi, Erich Scheikl, Robert Illing, Herbert Hopfgartner
  • Patent number: 8044674
    Abstract: A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: October 25, 2011
    Assignee: Infineon Technologies AG
    Inventors: Alberto Zanardi, Erich Scheikl, Robert Illing, Herbert Hopfgartner
  • Publication number: 20110157756
    Abstract: A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.
    Type: Application
    Filed: December 30, 2009
    Publication date: June 30, 2011
    Inventors: ALBERTO ZANARDI, ERICH SCHEIKL, ROBERT ILLING, HERBERT HOPFGARTNER
  • Publication number: 20110156799
    Abstract: A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.
    Type: Application
    Filed: December 30, 2009
    Publication date: June 30, 2011
    Inventors: Alberto Zanardi, Erich Scheikl, Robert IIIing, Herbert Hopfgartner
  • Publication number: 20110109372
    Abstract: A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.
    Type: Application
    Filed: November 6, 2009
    Publication date: May 12, 2011
    Inventors: Alberto Zanardi, Erich Scheikl, Robert Illing, Herbert Hopfgartner
  • Patent number: 7715160
    Abstract: A method and an apparatus for monitoring a load driven by a power semiconductor switch. The method may comprise, for example: driving a control electrode of the power semiconductor switch, in such a way that a rise in the load current through the power semiconductor switch is effected after a delay time; generating a diagnostic current flowing through the load, wherein the diagnostic current brings about a voltage drop across the load before the delay time has elapsed; and evaluating the voltage drop across the load before the delay time has elapsed.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: May 11, 2010
    Assignee: Infineon Technologies AG
    Inventors: Erich Scheikl, Alberto Zanardi
  • Publication number: 20100079119
    Abstract: A system and method for limiting current oscillation in power supplies. A method for operating a power supply comprises entering a current limitation mode, setting a current limit for a current flowing through a power switch of the power supply, and in response to determining a current limit has changed from a high value to a low value or detecting an occurrence of a fault condition, setting the current limit to the low value, and locking the current limit so that the current limit does not change. The method further comprises providing a current to a load coupled to the power supply.
    Type: Application
    Filed: September 30, 2008
    Publication date: April 1, 2010
    Inventors: Markus Ladurner, Alberto Zanardi, Robert Illing
  • Patent number: 7621671
    Abstract: Some embodiments discussed relate to an apparatus comprising a temperature sensor disposed in an integrated circuit, the temperature sensor including a bipolar transistor having a collector coupled to a portion of a substrate of the integrated circuit, and a bandgap reference circuit configured to generate a reference voltage, and a comparator coupled to the temperature sensor and the bandgap reference circuit, the comparator configured to receive a first voltage from the emitter of the bipolar transistor and the reference voltage from the bandgap reference circuit and generate a switch-off signal based on a voltage difference between the first voltage and the reference voltage.
    Type: Grant
    Filed: May 16, 2007
    Date of Patent: November 24, 2009
    Assignee: Infineon Technologies AG
    Inventors: Luca Petruzzi, Francesca Romano, Albino Pidutti, Alberto Zanardi
  • Publication number: 20090109586
    Abstract: A method and an apparatus for monitoring a load driven by a power semiconductor switch. The method may comprise, for example: driving a control electrode of the power semiconductor switch, in such a way that a rise in the load current through the power semiconductor switch is effected after a delay time; generating a diagnostic current flowing through the load, wherein the diagnostic current brings about a voltage drop across the load before the delay time has elapsed; and evaluating the voltage drop across the load before the delay time has elapsed.
    Type: Application
    Filed: October 29, 2007
    Publication date: April 30, 2009
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Erich Scheikl, Alberto Zanardi
  • Publication number: 20080285623
    Abstract: Some embodiments discussed relate to an apparatus comprising a temperature sensor disposed in an integrated circuit, the temperature sensor including a bipolar transistor having a collector coupled to a portion of a substrate of the integrated circuit, and a bandgap reference circuit configured to generate a reference voltage, and a comparator coupled to the temperature sensor and the bandgap reference circuit, the comparator configured to receive a first voltage from the emitter of the bipolar transistor and the reference voltage from the bandgap reference circuit and generate a switch-off signal based on a voltage difference between the first voltage and the reference voltage.
    Type: Application
    Filed: May 16, 2007
    Publication date: November 20, 2008
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Luca Petruzzi, Francesca Romano, Albino Pidutti, Alberto Zanardi