Abstract: A method of manufacturing a semiconductor device, in which a surface (1) of a semiconductor body (2) is provided with a first metallization layer comprising conductor tracks (3, 4), among which a number having a width w an a number having a greater width. On this structure an insulating layer (5) is deposited by means of a process in which the thickness of the formed insulating layer (5) is dependent on the width of the subjacent conductor tracks (3, 4), after which a capping layer (6) is deposited on the insulating layer (5). Then the silicon oxide layer is planarized by means of a polishing process. In this method, the conductor tracks having a width greater than w are split up into a number of parallel strips (10) having a width w, which strips are locally connected to one another.

Abstract: The invention relates to a semiconductor device comprising a bond pad structure, which bond pad structure enables analyses to be carried out at a level of a metal layer of the semiconductor device and comprises a matrix comprising trenches filled with a conductive material, which matrix is electrically contacted by the metal layer.

Abstract: Method of making a semiconductor device, in which method a first layer of silicon oxide (10) is deposited on a surface (2) of a silicon body (1), which layer is then provided with contact windows (11) within which semiconductor zones (5) formed in body and conductor tracks (6) of non-crystalline silicon formed on the surface are exposed. On the first layer of silicon oxide a first metallization layer is formed, comprising conductor tracks (16) which are in contact with the semiconductor zones (5) and conductor tracks (6) within the contact windows (11). The first metallization is then covered with a second layer of silicon oxide (17) which is provided with contact windows (19) within which the conductor tracks (16) of the first metallization are exposed. Then, successively, an adhesion layer (20) is deposited, the contact windows (19) are filled with tungsten plugs (22), and a second metallization layer is formed comprising conductor tracks in contact with the tungsten plugs.

Abstract: Method of making a semiconductor device, in which method a first layer of silicon oxide (10) is deposited on a surface (2) of a silicon body (1), which layer is then provided with contact windows (11) within which semiconductor zones (5) formed in body and conductor tracks (6) of non-crystalline silicon formed on the surface are exposed. On the first layer of silicon oxide a first metallization layer is formed, comprising conductor tracks (16) which are in contact with the semiconductor zones (5) and conductor tracks (6) within the contact windows (11). The first metallization is then covered with a second layer of silicon oxide (17) which is provided with contact windows (19) within which the conductor tracks (16) of the first metallization are exposed. Then, successively, an adhesion layer (20) is deposited, the contact windows (19) are filled with tungsten plugs (22), and a second metallization layer is formed comprising conductor tracks in contact with the tungsten plugs.

Abstract: The invention relates to a semiconductor device comprising a bond pad structure, which bond pad structure enables analyses to be carried out at a level of a metal layer of the semiconductor device and comprises a matrix comprising trenches filled with a conductive material, which matrix is electrically contacted by the metal layer.