Patents by Inventor Albion Pan

Albion Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-insulator-metal (MIM) capacitor with an electrode scheme for improved manufacturability and reliability
    Patent number: 9966427
    Abstract: A method for manufacturing a metal-insulator-metal (MIM) capacitor with a top electrode that is free of sidewall damage is provided. A bottom electrode layer is formed with a first material. An inter-electrode dielectric layer is formed over the bottom electrode layer. A top electrode layer is formed over the inter-electrode dielectric layer and without the first material. A first etch is performed into the top electrode layer and the inter-electrode dielectric layer to form a top electrode. A second etch into the bottom electrode layer to form a bottom electrode. The present application is also directed towards a MIM capacitor resulting from performing the method.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: May 8, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shyh-Wei Cheng, Hung-Lin Chen, Jui-Chun Weng, Shiuan-Jeng Lin, Tian Sheng Lin, Yu-Jui Wu, Albion Pan, Bob Sun
  • METAL-INSULATOR-METAL (MIM) CAPACITOR WITH AN ELECTRODE SCHEME FOR IMPROVED MANUFACTURABILITY AND RELIABILITY
    Publication number: 20170330931
    Abstract: A method for manufacturing a metal-insulator-metal (MIM) capacitor with a top electrode that is free of sidewall damage is provided. A bottom electrode layer is formed with a first material. An inter-electrode dielectric layer is formed over the bottom electrode layer. A top electrode layer is formed over the inter-electrode dielectric layer and without the first material. A first etch is performed into the top electrode layer and the inter-electrode dielectric layer to form a top electrode. A second etch into the bottom electrode layer to form a bottom electrode. The present application is also directed towards a MIM capacitor resulting from performing the method.
    Type: Application
    Filed: May 13, 2016
    Publication date: November 16, 2017
    Inventors: Shyh-Wei Cheng, Hung-Lin Chen, Jui-Chun Weng, Shiuan-Jeng Lin, Tian Sheng Lin, Yu-Jui Wu, Albion Pan, Bob Sun