Patents by Inventor Albrecht Ullrich
Albrecht Ullrich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240413023Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.Type: ApplicationFiled: August 21, 2024Publication date: December 12, 2024Inventors: Ralf RIESKE, Marko SWOBODA, Albrecht ULLRICH
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Patent number: 12107017Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.Type: GrantFiled: December 7, 2022Date of Patent: October 1, 2024Assignee: INFINEON TECHNOLOGIES AGInventors: Ralf Rieske, Marko Swoboda, Albrecht Ullrich
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Patent number: 12030216Abstract: A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.Type: GrantFiled: August 23, 2023Date of Patent: July 9, 2024Assignee: Siltectra GmbHInventors: Marko David Swoboda, Christian Beyer, Ralf Rieske, Albrecht Ullrich, Jan Richter
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Publication number: 20230390961Abstract: A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.Type: ApplicationFiled: August 23, 2023Publication date: December 7, 2023Inventors: Marko David Swoboda, Christian Beyer, Ralf Rieske, Albrecht Ullrich, Jan Richter
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Patent number: 11787083Abstract: The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4).Type: GrantFiled: August 7, 2018Date of Patent: October 17, 2023Assignee: Siltectra GmbHInventors: Marko Swoboda, Christian Beyer, Ralf Rieske, Albrecht Ullrich, Jan Richter
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Publication number: 20230093945Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.Type: ApplicationFiled: December 7, 2022Publication date: March 30, 2023Inventors: Ralf RIESKE, Marko SWOBODA, Albrecht ULLRICH
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Patent number: 11551981Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.Type: GrantFiled: April 23, 2020Date of Patent: January 10, 2023Assignee: Infineon Technologies AGInventors: Ralf Rieske, Marko Swoboda, Albrecht Ullrich
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Patent number: 11309191Abstract: A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.Type: GrantFiled: August 6, 2019Date of Patent: April 19, 2022Assignee: Siltectra GmbHInventors: Christian Beyer, Jan Richter, Ralf Rieske, Marko Swoboda, Albrecht Ullrich
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Publication number: 20200398381Abstract: The invention relates to a method for producing modifications (9) in the interior of a solid body (1). The method comprises the introduction of laser radiation (14) of a laser (29) into the interior of the solid body (1) via a first surface (8) of the solid body (1). The solid body (1) forms a crystal structure. Modifications (9) are produced at predefined points in a production plane (4) in the interior of the solid body (1) by the laser radiation (14). The modifications (9) are closer to the first surface (8) than to a second surface, the second surface being parallel to the first surface (8). A plurality of linear forms (103) can be produced by the modifications (9). The solid body (1) cracks subcritically in the region of each modification (9). The subcritical cracks have an average crack length of less than 150 ?m orthogonally to the direction of longitudinal extent of the linear form in question.Type: ApplicationFiled: February 19, 2019Publication date: December 24, 2020Inventors: Jan Richter, Ralf Rieske, Marko Swoboda, Albrecht Ullrich
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Publication number: 20200343147Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.Type: ApplicationFiled: April 23, 2020Publication date: October 29, 2020Inventors: Ralf RIESKE, Marko Swoboda, Albrecht Ullrich
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Publication number: 20200254650Abstract: The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4).Type: ApplicationFiled: August 7, 2018Publication date: August 13, 2020Inventors: Marko Swoboda, Christian Beyer, Ralf Rieske, Albrecht Ullrich, Jan Richter
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Publication number: 20200051831Abstract: A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.Type: ApplicationFiled: August 6, 2019Publication date: February 13, 2020Inventors: Christian Beyer, Jan Richter, Ralf Rieske, Marko Swoboda, Albrecht Ullrich
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Patent number: 9405185Abstract: A method of manufacturing a photomask includes forming a mask pattern with a critical mask feature on a photomask. Shape information which is descriptive for an outline of the critical mask feature is obtained from the photomask. The shape information contains position information identifying the positions of landmarks on the outline relative to each other. The landmarks may indicate local curvature extrema, points of inflexion, sharp bends in the curvature and/or local curvature-change maxima in the outline of the mask feature, respectively. The shape information may enable a shape metrology which is not completely based on rectangular approximations of mask features.Type: GrantFiled: April 7, 2014Date of Patent: August 2, 2016Assignee: Advanced Mask Technology Center GmbH & Co. KGInventors: Clemens Utzny, Markus Bender, Christian Buergel, Albrecht Ullrich
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Publication number: 20150286130Abstract: A method of manufacturing a photomask includes forming a mask pattern with a critical mask feature on a photomask. Shape information which is descriptive for an outline of the critical mask feature is obtained from the photomask. The shape information contains position information identifying the positions of landmarks on the outline relative to each other. The landmarks may indicate local curvature extrema, points of inflexion, sharp bends in the curvature and/or local curvature-change maxima in the outline of the mask feature, respectively. The shape information may enable a shape metrology which is not completely based on rectangular approximations of mask features.Type: ApplicationFiled: April 7, 2014Publication date: October 8, 2015Applicant: Advanced Mask Technology Center GmbH & Co. KGInventors: Clemens Utzney, Markus Bender, Christian Buergel, Albrecht Ullrich