Abstract: A device and a method of thermal management. In one embodiment, the device includes an integrated circuit, including: (1) a conductive region configured to be connected to a voltage source, (2) a transistor having a semiconductor channel with a controllable conductivity and (3) first and second conducting leads connecting to respective first and second ends of said channel, wherein a charge in the conductive region is configured to substantially raise an electrical potential energy of conduction charge carriers in the semiconductor channel and portions of said leads are located where an electric field produced by said charge is substantially weaker than near the semiconductor channel.

Abstract: An apparatus includes a substrate having a top surface, a substantially regular array of raised structures located over the top surface, and a layer located on the top surface between the structures. Distal surfaces of the structures are farther from the top surface than remaining portions of the structures. The layer is able to contract such that the distal surfaces of the structures protrude through the layer. The layer is able to swell such that the distal surfaces of the structures are closer to the top surface of the substrate than one surface of the layer.