Abstract: Column based defect management techniques are presented. Each column of the memory has an associated isolation latch or register whose value indicates whether the column is defective, but in addition to this information, for columns marked as defective, additional information is used to indicate whether the column as a whole is to be treated as defective, or whether just individual bits of the column are defective. The defective elements can then be re-mapped to a redundant element at either the appropriate bit or column level based on the data. When a column is bad, but only on the bit level, the good bits can still be used for data, although this may be done at a penalty of under programming for some bits, as is described further below. A self contained Built In Self Test (BIST) flow constructed to collect the bit information through a set of column tests is also described.

Abstract: A system, method and computer readable storage medium are disclosed for phase interpolator to generate a single phase output clock signal based on plurality of phase-shifted component clock signals and a digital user input control signal to be utilized in combination with a delay-locked loop circuit. In one embodiment, the phase interpolator utilizes a method of phase-traversing when generating the single phase output clock signal that prevents over- or undershooting of the desired target phase of the single phase output clock signal.

Abstract: A system, method and computer readable storage medium are disclosed for phase interpolator to generate a single phase output clock signal based on plurality of phase-shifted component clock signals and a digital user input control signal to be utilized in combination with a delay-locked loop circuit. In one embodiment, the phase interpolator utilizes a method of phase-traversing when generating the single phase output clock signal that prevents over- or undershooting of the desired target phase of the single phase output clock signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: Column based defect management techniques are presented. Each column of the memory has an associated isolation latch or register whose value indicates whether the column is defective, but in addition to this information, for columns marked as defective, additional information is used to indicate whether the column as a whole is to be treated as defective, or whether just individual bits of the column are defective. The defective elements can then be re-mapped to a redundant element at either the appropriate bit or column level based on the data. When a column is bad, but only on the bit level, the good bits can still be used for data, although this may be done at a penalty of under programming for some bits, as is described further below. A self contained Built In Self Test (BIST) flow constructed to collect the bit information through a set of column tests is also described.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: Column based defect management techniques are presented. Each column of the memory has an associated isolation latch or register whose value indicates whether the column is defective, but in addition to this information, for columns marked as defective, additional information is used to indicate whether the column as a whole is to be treated as defective, or whether just individual bits of the column are defective. The defective elements can then be re-mapped to a redundant element at either the appropriate bit or column level based on the data. When a column is bad, but only on the bit level, the good bits can still be used for data.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: Column based defect management techniques are presented. Each column of the memory has an associated isolation latch or register whose value indicates whether the column is defective, but in addition to this information, for columns marked as defective, additional information is used to indicate whether the column as a whole is to be treated as defective, or whether just individual bits of the column are defective. The defective elements can then be re-mapped to a redundant element at either the appropriate bit or column level based on the data. When a column is bad, but only on the bit level, the good bits can still be used for data.

Abstract: A technique for identifying bad pages of storage elements in a memory device. A flag byte is provided for each page group of one or more pages which indicates whether the page group is healthy. Flag bytes of selected page groups also indicate whether larger sets of page groups are healthy, according to bit positions in the flag bytes. A bad page identification process includes reading the flag bytes with a selected granularity so that not all flag bytes are read. Optionally, a drill down process reads flag bytes for smaller sets of page groups when a larger set of page groups is identified as having at least one bad page. This allows the bad page groups to be identified and marked with greater specificity. Redundant copies of flag bytes may be stored in different locations of the memory device. A majority vote process assigns a value to each bit.

Abstract: Column redundancy data is selectively retrieved in a memory device according to a set of storage elements which is currently being accessed, such as in a read or write operation. The memory device is organized into sets of storage elements such as logical blocks, where column redundancy data is loaded from a non-volatile storage location to a volatile storage location for one or more particular blocks which are being accessed. The volatile storage location need only be large enough to store the current data entries. The size of the set of storage elements for which column redundancy data is concurrently loaded can be configured based on an expected maximum number of defects and a desired repair probability. During a manufacturing lifecycle, the size of the set can be increased as the number of defects is reduced due to improvements in manufacturing processes and materials.

Abstract: Column based defect management techniques are presented. Each column of the memory has an associated isolation latch or register whose value indicates whether the column is defective, but in addition to this information, for columns marked as defective, additional information is used to indicate whether the column as a whole is to be treated as defective, or whether just individual bits of the column are defective. The defective elements can then be re-mapped to a redundant element at either the appropriate bit or column level based on the data. When a column is bad, but only on the bit level, the good bits can still be used for data, although this may be done at a penalty of under programming for some bits, as is described further below. A self contained Built In Self Test (BIST) flow constructed to collect the bit information through a set of column tests is also described.

Abstract: A technique for identifying bad pages of storage elements in a memory device. A flag byte is provided for each page group of one or more pages which indicates whether the page group is healthy. Flag bytes of selected page groups also indicate whether larger sets of page groups are healthy, according to bit positions in the flag bytes. A bad page identification process includes reading the flag bytes with a selected granularity so that not all flag bytes are read. Optionally, a drill down process reads flag bytes for smaller sets of page groups when a larger set of page groups is identified as having at least one bad page. This allows the bad page groups to be identified and marked with greater specificity. Redundant copies of flag bytes may be stored in different locations of the memory device. A majority vote process assigns a value to each bit.

Abstract: Column redundancy data is selectively retrieved in a memory device according to a set of storage elements which is currently being accessed, such as in a read or write operation. The memory device is organized into sets of storage elements such as logical blocks, where column redundancy data is loaded from a non-volatile storage location to a volatile storage location for one or more particular blocks which are being accessed. The volatile storage location need only be large enough to store the current data entries. The size of the set of storage elements for which column redundancy data is concurrently loaded can be configured based on an expected maximum number of defects and a desired repair probability. During a manufacturing lifecycle, the size of the set can be increased as the number of defects is reduced due to improvements in manufacturing processes and materials.