Abstract: A detector system which can be switched between single photon counting and charge integrating mode depending on the application, the photon flux and energy. Although the space for electronics in a pixel or strip detector system is very limited (as each channel is limited by the pixel size), the reconfiguration of the analog chain and the logic/counter in this smart way yields to have a detector system allowing both modes of operation and, therefore, effectively combining the characteristics of an Eiger® single photon counting system and a Jungfrau® charge integrating pixel detector system into one single detector. Depending on the application, the flux and the photon energy, the operator is enabled to switch between single photon counting and charge integrating mode of operation.

Abstract: A detector system which can be switched between single photon counting and charge integrating mode depending on the application, the photon flux and energy. Although the space for electronics in a pixel or strip detector system is very limited (as each channel is limited by the pixel size), the reconfiguration of the analog chain and the logic/counter in this smart way yields to have a detector system allowing both modes of operation and, therefore, effectively combining the characteristics of an Eiger® single photon counting system and a Jungfrau® charge integrating pixel detector system into one single detector. Depending on the application, the flux and the photon energy, the operator is enabled to switch between single photon counting and charge integrating mode of operation.

Abstract: An X ray detector with single photon measurement capabilities includes a layer of photosensitive material and an N×M array of photo-detector diodes in the layer of photosensitive material. The photo-detector diodes have a bias potential interface and a diode output interface. An N×M array of high gain, low noise readout unit cells are assigned to the photo-detector diodes. Each readout unit cell has an input interface connecting the diode output interface to a high-gain charge-to-voltage amplifier with integration capacitors. The high-gain charge-to-voltage amplifier can switch between different gains. A comparator and a digital block monitors the charge of the integration capacitance and switches the gain depending from the monitored charge of the integration capacitance. The pixel detector provides the possibility of in pixel intermediate evaluation of an automatic gain switching circuit state to increase the dynamic range of the detector in case of quasi continuous incoming particle flux.

Abstract: An X ray detector with single photon measurement capabilities includes a layer of photosensitive material and an N×M array of photo-detector diodes in the layer of photosensitive material. The photo-detector diodes have a bias potential interface and a diode output interface. An N×M array of high gain, low noise readout unit cells are assigned to the photo-detector diodes. Each readout unit cell has an input interface connecting the diode output interface to a high-gain charge-to-voltage amplifier with integration capacitors. The high-gain charge-to-voltage amplifier can switch between different gains. A comparator and a digital block monitors the charge of the integration capacitance and switches the gain depending from the monitored charge of the integration capacitance. The pixel detector provides the possibility of in pixel intermediate evaluation of an automatic gain switching circuit state to increase the dynamic range of the detector in case of quasi continuous incoming particle flux.

Abstract: A single photon counting detector system has a layer of photosensitive material and an N×M array of photo-detector diodes. Each photo-detector diode has a bias potential interface and a diode output interface. The bias potential interface is connected to bias potential. An N×M array of high gain, low noise readout unit cells is provided, one readout unit cell for each photo-detector diode. Each readout unit cell has an input interface connected to the diode output interface, a high-gain voltage amplifier with an integration capacitor at least two parallel lines of digital counters, each having a comparator with an individually selectable threshold and a gateable section to determine the counting intervals of the digital counters. A multiplexer allows access to the readout cell unit either on a per pixel basis or for several pixels in parallel to read out the digital counter to a data processor transferring the data off chip.

Abstract: A single photon counting detector system has a layer of photosensitive material and an N×M array of photo-detector diodes. Each photo-detector diode has a bias potential interface and a diode output interface. The bias potential interface is connected to bias potential. An N×M array of high gain, low noise readout unit cells is provided, one readout unit cell for each photo-detector diode. Each readout unit cell has an input interface connected to the diode output interface, a high-gain voltage amplifier with an integration capacitor at least two parallel lines of digital counters, each having a comparator with an individually selectable threshold and a gateable section to determine the counting intervals of the digital counters. A multiplexer allows access to the readout cell unit either on a per pixel basis or for several pixels in parallel to read out the digital counter to a data processor transferring the data off chip.