Abstract: A method includes providing a semiconductor substrate having a first region and a second region. The method includes forming a stack of dielectric layers over the semiconductor substrate. The method includes patterning the stack to form first trenches over the first region and second trenches over the second region. The method further includes forming first conductive features having a first width in the first trenches and second conductive features having a second width in the second trenches, where the second width is less than the first width.

Abstract: A method of processing a substrate that includes: forming a conformal etch stop layer (ESL) over a staircase pattern of the substrate, the staircase pattern including staircases, each of the staircases including a conductive surface; forming a dielectric layer over the ESL; planarizing a top surface of the dielectric layer; forming a patterned hardmask over the dielectric layer; and etching the dielectric layer selectively to the ESL using the patterned hardmask as an etch mask to form a plurality of recesses, each of the plurality of recesses landing on each of the staircases, the ESL protecting the conductive surface from the etching, the etching including exposing the substrate to a plasma generated from a process gas including a fluorocarbon, O2, and WF6, a flow rate of WF6 being between 0.01% and 1% of a total gas flow rate of the process gas.

Abstract: A method of etching a target material using plasma includes cyclically performing the steps of an etch step for a first duration to etch a target material exposed in openings of a patterned mask material, and a flash step for a second duration after the first duration to remove polymer material accumulated at the openings during the etch step. The etch step is performed by generating plasma from an etch precursor gas including an etchant species. The target material may be a dielectric, such as a dielectric target material that includes an oxide. The flash step is performed by generating plasma from a flash precursor gas. Bias power may be provided to the substrate during the flash step. The flash species is different from the etchant species. The flash precursor gas may include oxygen and no fluorocarbons.

Abstract: A method of etching a target material using plasma includes cyclically performing the steps of an etch step for a first duration to etch a target material exposed in openings of a patterned mask material, and a flash step for a second duration after the first duration to remove polymer material accumulated at the openings during the etch step. The etch step is performed by generating plasma from an etch precursor gas including an etchant species. The target material may be a dielectric, such as a dielectric target material that includes an oxide. The flash step is performed by generating plasma from a flash precursor gas. Bias power may be provided to the substrate during the flash step. The flash species is different from the etchant species. The flash precursor gas may include oxygen and no fluorocarbons.

Abstract: A method for forming a semiconductor device is disclosed. The method includes forming a first metal layer on top of an amorphous mask layer disposed over a substrate. The method includes forming a second metal layer that extends along vertical sidewalls of an opening in the amorphous mask layer. The method includes forming a first recess partially extending into the substrate using the first metal layer and the second metal layer as a first etch mask. The method includes forming a third metal layer that extends along vertical sidewalls of the first recess. The method includes forming a second recess below the first recess using the first to third metal layers as a second etch mask.

Abstract: A method for forming a semiconductor device includes forming a first metal layer on top of an amorphous mask layer disposed over a substrate, forming a second metal layer that covers vertical sidewalls of openings in the amorphous mask layer, and etching a pattern in the substrate using the first metal layer and the second metal layer as an etch mask.