Abstract: A method of manufacturing a semiconductor device whereby a layer (12) containing Co or Ni is deposited on a surface (2) of a semiconductor body (1) bounded by silicon regions (3, 4, 5, 6) and regions of insulating material (8, 9), after which the semiconductor body (1) is heated during a heat treatment to a temperature at which the Co or Ni forms a metal silicide with the silicon (3, 4, 5, 6), but not with the insulating material (8, 9). On the surface (2) of the layer (12) containing the Co or Ni, according to the invention, a layer of an amorphous alloy of this metal with a metal from a group comprising Ti, Zr, Ta, Mo, Nb, Hf and W is deposited, while furthermore the temperature is so adjusted during the heat treatment that the layer (12) of the amorphous alloy remains amorphous during the heat treatment.