Abstract: The present invention provides an interconnect for use in an integrated circuit, a method for manufacturing the interconnect, and a method for manufacturing an integrated circuit including the interconnect. The interconnect (100), among other elements, includes a surface conductive lead (160) located in an opening formed within a protective overcoat (110), and a barrier layer (140) located between the protective overcoat (110) and the surface conductive lead (160), a portion of the barrier layer (140) forming a skirt (145) that extends outside a footprint of the surface conductive lead (160).

Abstract: High performance digital transistors (140) and analog transistors (144, 146) are formed at the same time. The digital transistors (140) include first pocket regions (134) for optimum performance. These pocket regions (134) are masked from at least the drain side of the analog transistors (144, 146) to provide a flat channel doping profile on the drain side. Second pocket regions (200) may be formed in the analog transistors. The flat channel doping profile provides high early voltage and higher gain.

Abstract: High performance digital transistors (140) and analog transistors (144, 146) are formed at the same time. The digital transistors (140) include first pocket regions (134) for optimum performance. These pocket regions (134) are masked from at least the drain side of the analog transistors (144, 146) to provide a flat channel doping profile on the drain side. Second pocket regions (200) may be formed in the analog transistors. The flat channel doping profile provides high early voltage and higher gain.

Abstract: High performance digital transistors (140) and analog transistors (144, 146) are formed at the same time. The digital transistors (140) include first pocket regions (134) for optimum performance. These pocket regions (134) are masked from at least the drain side of the analog transistors (144, 146) to provide a flat channel doping profile on the drain side. Second pocket regions (200) may be formed in the analog transistors. The flat channel doping profile provides high early voltage and higher gain.

Abstract: High performance digital transistors (140) and analog transistors (144) are formed at the same time. The digital transistors (140) include pocket regions (134) for optimum performance. These pocket regions (134) are partially or completely suppressed from at least the drain side of the analog transistors (144) to provide a flat channel doping profile on the drain side. The flat channel doping profile provides high early voltage and higher gain. The suppression is accomplished by using the HVLDD implants for the analog transistors (144).

Abstract: A method for forming integrated circuit bipolar junction transistors for mixed signal circuits. The implants used to form the well regions of the CMOS circuits 20, 40 form the collector regions of bipolar junction transistors. The CMOS transistor pocket implants form the base region of the bipolar junction transistor, and the CMOS drain extension implants form the emitter region of the bipolar junction transistor.

Abstract: The device has a semiconductor chip having active circuitry in the face thereof. The circuitry has busing over it containing two conductive layers having a plurality of contacts and vias with spacings between them that alternate with respect to one another to provide current ballasting and improved switching uniformity. The spacings between the alternating contacts and vias provide regions of maximum conductor thickness and therefore reduces the busing resistance. Staggering the rows of alternating contacts and vias provides further current ballasting. A first conducting layer is used to contact and provide electrically isolated low resistive conducting paths to the various semiconductor regions while the second conducting region is used to provide selective contact to the first conductive layer, thus providing a means of busing large currents over active semiconductor area without sacrificing performance parameters.

Abstract: The device has a semiconductor chip having active circuitry in the face thereof. The circuitry has busing over it containing two conductive layers having a plurality of contacts and vias with spacings between them that alternate with respect to one another to provide current ballasting and improved switching uniformity. The spacings between the alternating contacts and vias provide regions of maximum conductor thickness and therefore reduces the busing resistance. Staggering the rows of alternating contacts and vias provides further current ballasting. A first conducting layer is used to contact and provide electrically isolated low resistive conducting paths to the various semiconductor regions while the second conducting region is used to provide selective contact to the first conductive layer, thus providing a means of busing large currents over active semiconductor area without sacrificing performance parameters.

Abstract: A digital filter for synthesized speech includes a full adder (72) that is multiplexed to perform multiplication and addition/subtraction operations. The inputs of the adder (72) are multiplexed by multiplexers (90) and (92). The adder (72) calculates Y-values and B-values. The B-values are input to a delay stack (116) and the Y-values are stored in a Y-register (78). One product is generated of a multiplier stored in a K-stack (128) and a multiplicand selected by a multiplexer (122). The multiplicand is a prestored summation that was earlier stored in a sum register (82). This product is stored in an ACC register (74) and utilized in both the calculation of the B-values and the Y-values. Therefore, only one multiplication is required for corresponding Y- and B-values, thereby reducing the number of multiplication steps required in processing each stage of a digital filter.

Abstract: A lattice filter for processing lattice equations includes a fast adder (78) for adding partial products to partially perform a multiplication step. A full adder (44) is provided for completing the multiplication and then adding the product with a previously calculated and stored value. The input to the full adder (44) is multiplexed with a multiplexer (74) for selecting the sum output of the fast adder (78) and a multiplexer (76) for selecting the carry output of the fast adder (78). The multiplexer (74) also selects prestored values for addition with the summed output of the full adder (44). This summed output is selected by the multiplexer (76). The fast adder (78) sums partial products simultaneous with addition operations of the full adder (44). In this manner, the full adder (44) operates at a slower rate than the fast adder (78). Storage registers (58), (62), (70) are utilized to delay results output by the full adder (44) for later selection and operation thereon.

Abstract: A system for processing a plurality of Equations includes a single full adder (44) which has the A input thereof multiplexed by multiplexer (62) and the B input thereof multiplexed by a multiplexer (94) and a multiplexer (66). The multiplexer (94) is operable to select a multiplicand for multiplication operations from a delay stack (54) for multiplication operations. The multiplication operation is performed by adding together partial products recording to Booth's modified algorithm. The partial products are generated by recode logic circuit (90) and (98). The recode logic circuits (90) and (98) are controlled by the multiplexed output from the multiplexer (80) which selects bits of a given multiplier stored in a K-stack (72). The multiplexer (62) in conjunction with the recode logic circuits (90) and (98) control reconfiguration of the adder (44) as a multiplication circuit.

Abstract: An LPC digital lattice filter includes a full adder (44) which has one input thereof multiplexed with a multiplexer (46) and the other input thereof multiplexed by a multiplexer (50). Combination of the multiplication and addition steps with the full adder (44) results in the calculation of one of the digital filter equations. The result of each of these equations is either a Y-value or a B-value. The Y-values are stored in the output of a Y-register (78) and the B-values are stored in a nine stage B-stack (100) for delay thereof. The multiplexer (60) selects multiplicands from either the output of the one stage delay (86), from the B-stack (100) or the input excitation I. The multiplexer (46) selects addends from either the output of the B-stack (100), the output of the B-register (96) or from the multiplexers (60) or (66). The values are calculated in an interleaved sequence with a Y-value calculated and then a B-value calculated utilizing this generated Y-value.

Abstract: A digital lattice filter includes a Y-adder (44) and a B-adder (106). The Y-adder (44) calculates the Y-values for a linear predictive coding voice compression technique and the B-adder (106) calculates the B-values. Each of the calculated B-values output by the B-adder (106) is input to a B-stack (118) for storage therein. The B-stack (118) delays the B-values for one sample period. Multiplier constants are contained in a K-stack (90) for output to both adders (44) and (106) for use in the multiplication operation. The final value is stored in a Y1-register (104). Each of the adders (44) and (106) are multiplexed to perform a multiplication operation followed by an addition operation to generate the respective Y- and B-values. A generated Y-value is stored in a Y-register (56) for use in the next sequential Y calculation. In addition, the generated Y-value is used as a multiplicand for generation of a B-value.