Abstract: Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving re-establishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin substrate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.

Abstract: Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support.

Abstract: A high brightness electron probe beam is formed by generating an electron beam with an electron gun operated in a high current emission configuration, selecting the region of the cross-over having the highest brightness and then limiting contributions to the final beam of a demagnification column to electrons originating only from this region of the cross-over.

Abstract: Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support. The resist is for example a contamination film from a vacuum pump oil used in evacuating the apparatus used to perform the process, e.g. silicone oil.

Abstract: The disclosed method is one which provides an extremely thin substrate upon which there can be laid down a high resolution pattern of material such as metal by an electron beam fabrication technique. The latter technique is one wherein a resist is placed on the surface of the substrate. Thereafter, an electron beam is utilized to expose the resist in the desired pattern. The exposed resist is then removed and the metal or other material is laid down on the locations where the resist has been removed. With the use of the very thin substrate, the amount and effect of electron backscattering is substantially minimized whereby the consequent decrease of resolution due to exposure of the resist with the backscattered electrons is effectively eliminated. Accordingly, the resist exposure can be confined to much narrower widths than heretofore possible with known electron beam fabrication techniques.