Abstract: The present invention relates to a graphene film, which is obtainable by a method comprising the steps of: a) providing a substrate, b) epitaxially growing a metal layer on a surface of the substrate, c) optionally increasing the thickness of the metal layer obtained in step b) by growing a metal onto the epitaxially grown metal layer, d) peeling off the metal layer obtained in step b) or optionally in step c) from the substrate and e) depositing graphene onto at least a part of that surface of the metal layer obtained in step d), which was in contact with the substrate before the peeling off conducted in step d). Such a graphene film has a very high charge carrier mobility, namely, when measured on a SiO2 substrate, of more than 1 1000 cm2/V-sec, of at least 15000 cm2/V-sec, of at least 20000 cm2/V-sec, of at least 25000 cm2/V-sec or even of at least 30000 cm2/V-sec.