Patents by Inventor Aled Owen Morgan

Aled Owen Morgan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optoelectronic devices formed over a buffer
    Patent number: 11069825
    Abstract: An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: July 20, 2021
    Assignee: IQE plc
    Inventors: Amy Wing Kwan Liu, Dmitri Lubyshev, Joel Mark Fastenau, Scott Alan Nelson, Michael Vincent Kattner, Philip Lee Frey, Matthew Fetters, Hubert Krysiak, Zhaoquan Zeng, Aled Owen Morgan, Stuart Andrew Edwards
  • OPTOELECTRONIC DEVICES FORMED OVER A BUFFER
    Publication number: 20190371947
    Abstract: An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.
    Type: Application
    Filed: May 28, 2019
    Publication date: December 5, 2019
    Inventors: Amy Wing Kwan Liu, Dmitri Lubyshev, Joel Mark Fastenau, Scott Alan Nelson, Michael Vincent Kattner, Philip Lee Frey, Matthew Fetters, Hubert Krysiak, Zhaoquan Zeng, Aled Owen Morgan, Stuart Andrew Edwards
  • Compound Semiconductor Device and Method of Producing the Same
    Publication number: 20120007144
    Abstract: A semiconductor device comprises an Si substrate 10 and a compound layer 11 of Si1-XGeX disposed on the substrate 10. X is varied from 0 to 0.2 away from the substrate 10 towards the upper surface of the compound layer 11, with the rate of change of X increasing through the layer. The increasing rate of change of X significantly improves the defectivity levels and the surface roughness at the surface of layer 11.
    Type: Application
    Filed: June 6, 2011
    Publication date: January 12, 2012
    Applicant: IQE SILICON COMPOUNDS LTD
    Inventors: Maurice Howard Fisher, Benoit Alfred Louis Roumiguires, Aled Owen Morgan