Abstract: A computer-implemented method of determining the number of photons contributing to an output of a photonic sensor, including receiving an electrical signal from the photonic sensor proportional to a number of photons the photonic sensor detects at its input as a function of time, wherein the photonic sensor is calibrated such that a response of the photonic sensor to a single photon detected is in a waveform comprising an amplitude and time, wherein the product amplitude X time is statistically bounded, determining a probabilistic boundary between one or more of electrical, optical, and thermal sources of noise of the sensor, acquiring each response wave form from the sensor through analog-to-digital conversion with a resolution in amplitude and time corresponding to accuracy required in quantifying the response, storing each acquired response, individually, in real-time, or in buffered packets in digital form, determining the number of photons for a specific time resolved acquisition, and effecting a summati

Abstract: A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10?6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO3.

Abstract: A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10?6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO3.

Abstract: The present invention relates to tunable microresonators, as well as methods of designing and tuning such resonators. In particular, tuning includes applying an electrical bias to the resonator, thereby shifting the resonant frequency.

Abstract: A focusing interdigital transducer (IDT) and corresponding single- and dual-port piezoelectric devices are disclosed. The focusing interdigital transducer, which generates Lamé acoustic waves, permits operation at significantly higher frequencies than those possible with traditional IDTs. The focusing IDT employs multiple arced fingers formed both above and below the piezoelectric layer to improve coupling efficiency by coupling through both the e31 and e33 piezoelectric coefficients to the piezoelectric layer. By optimizing both anchor design and location, acoustic wave losses are minimized, thereby improving the device's quality factor Q. Through proper bus design and selection of the number of IDT fingers, a device's impedance can be tuned for a given application. The focusing IDTs may be used in single-port filter devices and dual-port transformer devices. The single- and dual-port devices may operate at a single frequency, at two frequencies, or over a band of frequencies.

Abstract: An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film.

Abstract: A radio frequency (RF) receiver comprises a passive impedance transforming voltage amplifier and a resonant, latching micromechanical switch having a deflectable bridge, an RF actuation electrode receivingly connected to the amplifier, and a DC bias electrode positioned to latch the switch in a closed position by electrostatic attraction when energized by a suitable voltage. The bridge is configured with a mechanical mode of vibration that periodically urges the switch toward the closed position.

Abstract: A radio-frequency photonic devices employs photon-phonon coupling for information transfer. The device includes a membrane in which a two-dimensionally periodic phononic crystal (PnC) structure is patterned. The device also includes at least a first optical waveguide embedded in the membrane. At least a first line-defect region interrupts the PnC structure. The first optical waveguide is embedded within the line-defect region.