Abstract: A memory cell comprises a dielectric layer and a phase change material. The dielectric layer defines a trench having both a wide portion and a narrow portion. The narrow portion is substantially narrower than the wide portion. The phase change material, in turn, at least partially fills the wide and narrow portions of the trench. What is more, the phase change material within the narrow portion of the trench defines a void. Data can be stored in the memory cell by heating the phase change material by applying a pulse of switching current to the memory cell. Advantageously, embodiments of the invention provide high switching current density and heating efficiency so that the magnitude of the switching current pulse can be reduced.

Abstract: A memory cell for use in integrated circuits comprises a chalcogenide feature and a transition metal oxide feature. Both the chalcogenide feature and transition metal oxide feature each have at least two stable electrical resistance states. At least two bits of data can be concurrently stored in the memory cell by placing the chalcogenide feature into one of its stable electrical resistance states and by placing the transition metal oxide feature into one of its stable electrical resistance states.

Abstract: Disclosed are a phase change memory cell and a method of forming the memory cell. The memory cell comprises a main body of phase change material connected directly to a bottom contact and via a narrow channel of phase change material to a top contact. The channel is tapered from the top contact towards the main body. A minimum width of the channel has a less than minimum lithographic dimension and is narrower than a width of the main body. Therefore, the channel provides a confined region for the switching current path and restricts phase changing to within the channel. In addition an embodiment of the memory cell isolates the main body of phase change material by providing a space between the phase change material and the cell walls. The space allows the phase change material to expand and contract and also limits heat dissipation.

Abstract: A combination of a radio frequency identification transponder (RFID Tag) and to a magnetic electronic article surveillance (EAS) device is disclosed. The present invention relates generally to radio frequency identification (RFID) systems, and more specifically to RFID transponders for use in RFID systems and the method for their assembly.

Abstract: A combination of a radio frequency identification transponder (RFID Tag) and to a magnetic electronic article surveillance (EAS) device is disclosed. The present invention relates generally to radio frequency identification (RFID) systems, and more specifically to RFID transponders for use in RFID systems and the method for their assembly.

Abstract: A combination of a radio frequency identification transponder (RFID Tag) and to a magnetic electronic article surveillance (EAS) device is disclosed. The present invention relates generally to radio frequency identification (RFID) systems, and more specifically to RFID transponders for use in RFID systems and the method for their assembly.