Patents by Inventor Alek Chen

Alek Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070121090
    Abstract: A method of configuring a transfer of an image of a pattern onto a substrate with a lithographic apparatus is presented. The method includes selecting a plurality of parameters including a pupil filter parameter; calculating an image of the pattern for the selected parameters; calculating a metric that represents a variation of an attribute of the calculated image over a process range; and adjusting the plurality of parameters based on a result of the metric.
    Type: Application
    Filed: November 30, 2005
    Publication date: May 31, 2007
    Applicant: ASML Netherlands B.V.
    Inventors: Alek Chen, Steven Hansen
  • Publication number: 20070072133
    Abstract: A double exposure method for enhancing the image resolution in a lithographic system, is presented herein. The invention comprises decomposing a desired pattern to be printed on the substrate into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating the substrate with a first positive tone resist layer and a thin second positive tone resist layer on top of a target layer which is to be patterned with the desired dense line pattern. The second resist material is absorbing exposure radiation during a first patterning exposure and after development during a second patterning exposure to prevent exposure above energy-to-clear of at least a portion of the first resist material underneath exposed portions of the second resist material layer.
    Type: Application
    Filed: September 26, 2005
    Publication date: March 29, 2007
    Applicant: ASML Netherlands B.V.
    Inventor: Alek Chen
  • Publication number: 20070072097
    Abstract: A multiple exposure method for enhancing the image resolution in a lithographic system is disclosed. The method comprises, for example, decomposing a desired pattern to be printed on the substrate into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating the substrate with a positive tone resist layer and a relatively thin positive tone developable material layer on top of a target layer which is to be patterned with the desired dense feature pattern. The positive tone developable material absorbs exposure radiation during a first patterning exposure and, after development, during a second patterning exposure to prevent exposure of at least a portion of the positive tone resist layer, underneath exposed portions of the positive tone developable material layer, to an exposure dose above a fraction of an energy-to-clear exposure dose associated with the positive tone resist layer.
    Type: Application
    Filed: September 25, 2006
    Publication date: March 29, 2007
    Applicant: ASML NETHERLANDS B.V.
    Inventor: Alek Chen
  • Publication number: 20070018286
    Abstract: A method for imaging using a lithographic system includes decomposing a desired pattern to be printed on the substrate into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating a substrate a substrate with a stack of two sacrificial hard masks on top of a target layer which is to be patterned with the desired dense line pattern. To provide suitable etch stop layers, the material of the sacrificial mask layers and the target layer is chosen such that for each etching step, the etching between two exposures and the etching of the target layer have alternating selectivities.
    Type: Application
    Filed: August 30, 2005
    Publication date: January 25, 2007
    Applicant: ASML Netherlands B.V.
    Inventor: Alek Chen