Abstract: Embodiments may relate an electronic device that includes a first platform and a second platform coupled with a chassis. The platforms may include respective microelectronic packages. The electronic device may further include a waveguide coupled to the first platform and the second platform such that their respective microelectronic packages are communicatively coupled by the waveguide. Other embodiments may be described or claimed.

Abstract: Embodiments may relate to a microelectronic package that includes a radio frequency (RF) chip coupled with a die by interconnects with a first pitch. The RF chip may further be coupled with a waveguide of a package substrate by interconnects with a second pitch that is different than the first pitch. The RF chip may facilitate conveyance of data to the waveguide as an electromagnetic signal with a frequency greater than approximately 20 gigahertz (GHz). Other embodiments may be described or claimed.

Abstract: Embodiments may relate to a microelectronic package that includes a substrate signal path and a waveguide. The package may further include dies that are communicatively coupled with one another by the substrate signal path and the waveguide. The substrate signal path may carry a signal with a frequency that is different than the frequency of a signal that is to be carried by the waveguide. Other embodiments may be described or claimed.

Abstract: Device package and a method of forming a device package are described. The device package includes an interposer with interconnects on an interconnect package layer and a conductive layer on the interposer. The device package has dies on the conductive layer, where the package layer includes a zero-misalignment two-via stack (ZM2VS) and a dielectric. The ZM2VS directly coupled to the interconnect. The ZM2VS further includes the dielectric on a conductive pad, a first via on a first seed, and first seed on a top surface of the conductive pad, where the first via extends through dielectric. The ZM2VS also has a conductive trace on dielectric, and a second via on a second seed, the second seed is on the dielectric, where the conductive trace connects to first and second vias, where second via connects to an edge of conductive trace opposite from first via.

Abstract: Embodiments may relate to a semiconductor package that includes a die and a package substrate. The package substrate may include one or more cavities that go through the package substrate from a first side of the package substrate that faces the die to a second side of the package substrate opposite the first side. The semiconductor package may further include a waveguide communicatively coupled with the die. The waveguide may extend through one of the one or more cavities such that the waveguide protrudes from the second side of the package substrate. Other embodiments may be described or claimed.

Abstract: Embodiments may relate to an electronic module for use in an electronic device. The electronic module may include a printed circuit board (PCB) with a first die and a second die. A waveguide channel may be communicatively coupled with the first die and the second die and configured to convey an electromagnetic signal from the first die to the second die. In embodiments, the electromagnetic signal may have a frequency greater than 30 gigahertz (GHz). Other embodiments may be described or claimed.

Abstract: Embodiments may relate to a semiconductor package that includes a package substrate coupled with a die. The package may further include a waveguide coupled with the first package substrate. The waveguide may include two or more layers of a dielectric material with a waveguide channel positioned between two layers of the two or more layers of the dielectric material. The waveguide channel may convey an electromagnetic signal with a frequency greater than 30 gigahertz (GHz). Other embodiments may be described or claimed.

Abstract: A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. Forming a first solder resist (SR) layer on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. Forming a second solder resist (SR) layer on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

Abstract: Embodiments may relate to an semiconductor package. The semiconductor package may include a die coupled with the face of the package substrate. The semiconductor package may further include a waveguide coupled with the face of the package substrate adjacent to the die, wherein the waveguide is to receive an electromagnetic signal from the die and facilitate conveyance of the electromagnetic signal in a direction parallel to the face of the package substrate. Other embodiments may be described or claimed.

Abstract: A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include: a first die having a first surface and an opposing second surface, first conductive contacts at the first surface of the first die, and second conductive contacts at the second surface of the first die; and a second die having a first surface and an opposing second surface, and first conductive contacts at the first surface of the second die; wherein the second conductive contacts of the first die are coupled to the first conductive contacts of the second die by interconnects, the second surface of the first die is between the first surface of the first die and the first surface of the second die, and a footprint of the first die is smaller than and contained within a footprint of the second die.

Abstract: A device package and a method of forming a device package are described. The device package includes a dielectric on a conductive pad, and a first via on a first seed on a top surface of the conductive pad. The device package further includes a conductive trace on the dielectric, and a second via on a second seed layer on the dielectric. The conductive trace connects to the first via and the second via, where the second via connects to an edge of the conductive trace opposite from the first via. The dielectric may include a photoimageable dielectric or a buildup film. The device package may also include a seed on the dielectric prior to the conductive trace on the dielectric, and a second dielectric on the dielectric, the conductive trace, and the first and second vias, where the second dielectric exposes a top surface of the second via.

Abstract: A package substrate, comprising a package comprising a substrate, the substrate comprising a dielectric layer, a via extending to a top surface of the dielectric layer; and a bond pad stack having a central axis and extending laterally from the via over the first layer. The bond pad stack is structurally integral with the via, wherein the bond pad stack comprises a first layer comprising a first metal disposed on the top of the via and extends laterally from the top of the via over the top surface of the dielectric layer adjacent to the via. The first layer is bonded to the top of the via and the dielectric layer, and a second layer is disposed over the first layer. A third layer is disposed over the second layer. The second layer comprises a second metal and the third layer comprises a third metal. The second layer and the third layer are electrically coupled to the via.

Abstract: The present description addresses example methods for forming multi-chip microelectronic devices and the resulting devices. The multiple semiconductor die of the multichip package will be attached to a solid plate with a bonding system selected to withstand stresses applied when a mold material is applied to encapsulate the die of the multichip device. The solid plate will remain as a portion of the finished multi-chip device. The solid plate can be a metal plate to function as a heat spreader for the completed multi-chip device.

Abstract: An apparatus is provided which comprises: a plurality of first conductive contacts having a first pitch spacing on a substrate surface, a plurality of second conductive contacts having a second pitch spacing on the substrate surface, and a plurality of conductive interconnects disposed within the substrate to couple a first grouping of the plurality of second conductive contacts associated with a first die site with a first grouping of the plurality of second conductive contacts associated with a second die site and to couple a second grouping of the plurality of second conductive contacts associated with the first die site with a second grouping of the plurality of second conductive contacts associated with the second die site, wherein the conductive interconnects to couple the first groupings are present in a layer of the substrate above the conductive interconnects to couple the second groupings. Other embodiments are also disclosed and claimed.

Abstract: Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

Abstract: An embedded magnetic inductor coil is at least partially exposed in a recess that seats an embedded multi-chip interconnect bridge die on the coil. The embedded multi-chip interconnect bridge die provides a communications bridge between a dominant semiconductive device and a first semiconductive device.

Abstract: A device package and method of forming the device package are described. The device package includes a dielectric on a conductive pad, a first via on a top surface of conductive pad, where the first via extends through dielectric, and a conductive trace on dielectric. The device package has a second via on dielectric, where the conductive trace connects to first and second vias, and the second via connects to an edge of conductive trace opposite from first via. The device package may have a seed on dielectric, where the seed electrically couples to conductive trace, a first seed on the top surface of conductive pad, where the first via is on first seed, and a second seed on a top surface of first via, the second seed on surfaces of second via, where the conductive trace is on second seed disposed on both first and second vias.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate including a dielectric material having a first surface and an opposing second surface, a first photodefinable material on at least a portion of the second surface, and a second photodefinable material on at least a portion of the first photodefinable material, wherein the second photodefinable material has a different material composition than the first photodefinable material.

Abstract: An embedded magnetic inductor coil is at least partially exposed in a recess that seats an embedded multi-chip interconnect bridge die on the coil. The embedded multi-chip interconnect bridge die provides a communications bridge between a dominant semiconductive device and a first semiconductive device.