Abstract: The present invention is related to a method for electroplating a copper deposit onto a substrate, wherein the method comprises the steps of: a) immersing the substrate into an electroplating bath having a copper ion concentration comprised between 0.5 mmol·l?1 and 50 mmol·l?1, and an acid concentration comprised between 0.05% and 10% per volume of said electroplating bath; and wherein the method further comprises the step of b) electroplating the copper deposit from the electroplating bath onto the substrate. In particular, the present invention is directed to an improved method for the manufacture of semiconductor integrated circuit (IC) devices provided with sub-100 nm features.

Abstract: A method for producing on-chip interconnect structures on a substrate is provided, comprising at least the steps of providing a substrate and depositing a ruthenium-comprising layer on top of said substrate, and then performing a pre-treatment of the Ru-comprising layer electrochemically with an HBF4-based electrolyte, and then performing electrochemical deposition of copper onto the pre-treated Ru-comprising layer.

Abstract: A method for producing on-chip interconnect structures on a substrate is provided, comprising at least the steps of providing a substrate and depositing a ruthenium-comprising layer on top of said substrate, and then performing a pre-treatment of the Ru-comprising layer electrochemically with an HBF4-based electrolyte, and then performing electrochemical deposition of copper onto the pre-treated Ru-comprising layer.

Abstract: Preferred embodiments provide a method for forming at least one catalyst nanoparticle on at least one sidewall of a three-dimensional structure on a main surface of a substrate, the main surface lying in a plane and the sidewall of the three-dimensional structure lying in a plane substantially perpendicular to the plane of the main surface of the substrate. The method comprises obtaining a three-dimensional structure on the main surface, the three-dimensional structure comprising catalyst nanoparticles embedded in a non-catalytic matrix and selectively removing at least part of the non-catalytic matrix at the sidewalls of the three-dimensional structure to thereby expose at least one catalyst nanoparticle.

Abstract: Preferred embodiments provide a method for forming at least one catalyst nanoparticle on at least one sidewall of a three-dimensional structure on a main surface of a substrate, the main surface lying in a plane and the sidewall of the three-dimensional structure lying in a plane substantially perpendicular to the plane of the main surface of the substrate. The method comprises obtaining a three-dimensional structure on the main surface, the three-dimensional structure comprising catalyst nanoparticles embedded in a non-catalytic matrix and selectively removing at least part of the non-catalytic matrix at the sidewalls of the three-dimensional structure to thereby expose at least one catalyst nanoparticle. According to preferred embodiments a method is also provided for forming at least one elongated nanostructure, such as e.g. a nanowire or carbon nanotube, using the catalyst nanoparticles formed by the method according to preferred embodiments as a catalyst.