Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract: A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment.

Abstract: A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

Abstract: A substrate holding and transporting assembly is disclosed. The substrate holding and transporting assembly includes a base plate and a pair of clamps connected to the base plate in a spaced apart orientation, the spaced apart orientation of the pair of clamps enable support of a substrate with at least two independent points. The substrate holding and transporting assembly also includes an electrode assembly connected to the base plate at a location that is substantially between the pair of clamps. The electrode assembly defined to impart an electrical contact to the substrate when present and held by the pair of clamps.

Abstract: An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

Abstract: A method for cleaning a substrate is provided. The method includes providing foam to a surface of the substrate, brush scrubbing the surface of the substrate, providing pressure to the foam, and channeling the pressured foam to produce jammed foam, the channeling including channeling the pressured foam into a gap, the gap being defined by a space between a surface of a brush enclosure and the surface of the substrate. The brush scrubbing of the surface of the substrate and the channeling of the pressured foam across the surface of the substrate facilitate particle removal from the surface of the substrate.

Abstract: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer, such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer, is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.

Abstract: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

Abstract: An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.

Abstract: A substrate holding and transporting assembly is disclosed. The substrate holding and transporting assembly includes a base plate and a pair of clamps connected to the base plate in a spaced apart orientation, the spaced apart orientation of the pair of clamps enable support of a substrate with at least two independent points. The substrate holding and transporting assembly also includes an electrode assembly connected to the base plate at a location that is substantially between the pair of clamps. The electrode assembly defined to impart an electrical contact to the substrate when present and held by the pair of clamps.

Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.

Abstract: An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.