Abstract: A reverse conducting insulated gate bipolar transistor (RC-IGBT) includes an active area in a semiconductor body. The active area includes an IGBT area, a diode area, a transition area laterally adjacent to the diode area, trenches extending into the semiconductor body from a first surface of the semiconductor body, and a drift region of a first conductivity type that includes lifetime killing impurities in the transition area. The active area further includes a barrier region of the first conductivity type between the drift region and the first surface. A maximum doping concentration in the barrier region is at least 100 times larger than an average doping concentration in the drift region. The barrier region laterally extends through at least part of the transition area, and laterally ends in or before the diode area. The RC-IGBT further includes an edge termination area at least partly surrounding the active area.

Abstract: According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may include: forming a precipitate removal layer over the semiconductor region, wherein the precipitate removal layer may define an absorption temperature at which a chemical solubility of a constituent of the at least one precipitate is greater in the precipitate removal layer than in the semiconductor region; and heating the at least one precipitate above the absorption temperature.

Abstract: According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may include: forming a precipitate removal layer over the semiconductor region, wherein the precipitate removal layer may define an absorption temperature at which a chemical solubility of a constituent of the at least one precipitate is greater in the precipitate removal layer than in the semiconductor region; and heating the at least one precipitate above the absorption temperature.