Abstract: A sensor device which allows significant reductions in structural dimensions while maintaining sensitivity over a wide operating range. The sensor device comprises a plurality of integral layers formed over a typical field effect transistor. This plurality of integral layers includes a first additional electrode, a dielectric layer, a conducting layer, a second additional electrode, an active medium, a transparent electrode, and a layer of luminofore.

Abstract: A high resolution sensor device for storing electromagnetic radiation and for transforming electromagnetic radiation into electrical/video signals. Such a sensor device is comprised of: 1) a transistor matrix having a Metal/Dielectric/Semiconductor (MDS) structure; 2) a conducting layer; 3) an active medium; 4) a transparent electrode; 5) horizontal and vertical scanning circuits; and 6) a voltage source. The structure of the sensor device is such that the conducting layer is formed on the surface of the dielectric layer, outside the regions of the gates, in the MDS-transistor matrix. The active medium is formed over the conducting layer, the dielectric layer, and the gates. The transparent electrode is formed on the surface of the active medium. The transistor drains are connected to vertical bus-bars of a vertical scanning circuit, while the transistor sources are connected to horizontal bus-bars of a horizontal scanning circuit.