Abstract: A method and device for operating a Self-Driving Car (SDC) are disclosed. The device executes in real-time a first processing pipeline including generating static attributes for a plurality of potential positions of the SDC on the road segment, and caching the static attributes in association with the respective ones of the plurality of potential positions. The device executes in real-time a second processing pipeline in parallel with the first processing pipeline including generating a graph-structure for operating the SDC on the road segment. The generating the graph-structure includes generating dynamic attributes for a given edge of the graph-structure, acquiring from the cache memory static attributes for the given edge of the graph-structure, such that the given edge in the graph-structure is associated with the static attributes generated by the first processing pipeline and with the dynamic attributes generated by the second processing pipeline.

Abstract: A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.