Abstract: A light-emitting device includes a semiconductor diode structure, a surface-lattice-mode (SLR) structure against the back of the diode structure, and a reflector against the back of the SLR structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The SLR structure includes an index-matched layer, a lower-index layer, and scattering elements, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating surface-lattice-resonance modes supported by the SLR structure, to propagate perpendicularly toward the device exit surface.

Abstract: A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

Abstract: A light-emitting device includes a semiconductor diode structure, a quasi-guided-mode (QGM) structure against the back of the diode structure, and a reflector against the back of the QGM structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The QGM structure includes a waveguide layer, a cladding layer, and scattering elements, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating quasi-guided modes supported by the QGM structure, to propagate perpendicularly toward the device exit surface.