Abstract: An optical element is provided for beam shaping for radiation emitted by a radiation-emitting semiconductor chip. The optical element includes a radiation entrance face and a boundary surface different from the radiation entrance face with a first region and a second region. The first and second regions are arranged and embodied such that a first radiation portion of radiation entering the optical element through the radiation entrance face is reflected in the first region and after reflection in the first region is deflected in the second region towards a plane defined by the radiation entrance face.

Abstract: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.

Abstract: A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.

Abstract: An optical element has an optical body and a number of microstructures. The optical body takes the form of a half-shell and has an inner face and an outer face. The microstructures form the inner and/or outer face of the optical body at least in places and are light-scattering refractive structures. The invention further relates to a radiation-emitting device having at least one semiconductor component and one such optical element.

Abstract: A lighting device has a carrier with a mounting face. A number of light-emitting diodes include at least two of the light-emitting diodes suitable for emitting light of different colors during operation. At least one color sensor, during operation, detects the light of at least one of the light-emitting diodes. At least one light-measuring face is illuminated by light of at least one of the light-emitting diodes and reflects and/or scatters at least a portion of this light. The light-emitting diodes and the at least one color sensor are arranged on the mounting surface, the at least one light-measuring face is arranged at a distance from the carrier, and the at least one color sensor; detects for the most part light reflected by the at least one light-measuring face from at least one of the multiplicity of light-emitting diodes.

Abstract: A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.

Abstract: A surface light guide includes a radiation exit area running along a main extension plane of the surface light guide and includes a light guiding region, which has scattering locations and a coating arranged on a first main area of the light guiding region, wherein radiation coupled in along the main extension plane impinging on the first main area after scattering at the scattering locations has an excessively increased radiation component and the coating reduces in a targeted manner an exit of the excessively increased radiation component from the radiation exit area.

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract: An optoelectronic component comprises: at least one semiconductor chip suitable for generating electromagnetic radiation, a beam shaping element (1), through which at least part of the electromagnetic radiation emitted by the semiconductor chip during operation passes and which has an optical axis (2), and which has an outer contour (5) with respect to a coordinate system (3, 4) perpendicular to the optical axis (2), wherein the contour (5) constitutes a curve (n) that is mirror-symmetrical with respect to both central axes (a1, a2) of an ellipse (e) inscribed by the contour, wherein the following succeed one another in each of the four identical sections between the respective central axes (a1, a2): an ellipse segment (b1), a linear part (c1) a second ellipse segment (d), a further linear part (c2) and a third ellipse segment (b2).

Abstract: A lighting device may include: a rod-shaped carrier body with at least one first and one second mounting side and a main direction of extent, first semiconductor light-emitting elements on first mounting faces of the first mounting side, and second semiconductor light-emitting elements on second mounting faces of the second mounting side, wherein the first and the second mounting sides face away from one another, wherein the mounting faces are formed by depressions in the mounting sides, which depressions are arranged so as to be spaced apart along the main direction of extent, and wherein the first semiconductor light-emitting elements are identical to one another and the second semiconductor light-emitting elements are identical to one another.

Abstract: A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.

Abstract: An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

Abstract: A mixed light source has a first semiconductor component, which is provided for generating a first radiation fraction, and a second semiconductor component, which is provided for generating radiation of a second radiation fraction different from the first radiation fraction. The first semiconductor component is mounted by a first mounting point on a first heat sink with a first thermal resistance R1. The second semiconductor component is mounted by a second mounting point on a second heat sink with a second thermal resistance R2. The thermal resistances R1 and R2 are different from one another.

Abstract: The invention relates to a surface light source with a lighting surface that includes at least one semiconductor body that emits electromagnetic radiation from its front side during operation. Decoupling structures are suitable for producing a local variation of the light density on the lighting surface, so that the light density is increased in at least one illumination area with respect to a background area.

Abstract: An optical element is provided for beam shaping for radiation emitted by a radiation-emitting semiconductor chip. The optical element includes a radiation entrance face and a boundary surface different from the radiation entrance face with a first region and a second region. The first and second regions are arranged and embodied such that a first radiation portion of radiation entering the optical element through the radiation entrance face is reflected in the first region and after reflection in the first region is deflected in the second region towards a plane defined by the radiation entrance face.

Abstract: An optoelectronic component comprises:—at least one semiconductor chip suitable for generating electromagnetic radiation,—a beam shaping element (1), through which at least part of the electromagnetic radiation emitted by the semiconductor chip during operation passes and which has an optical axis (2), and which has an outer contour (5) with respect to a coordinate system (3, 4) perpendicular to the optical axis (2), wherein the contour (5) constitutes a curve (n) that is mirror-symmetrical with respect to both central axes (a1, a2) of an ellipse (e) inscribed by the contour, wherein the following succeed one another in each of the four identical sections between the respective central axes (a1, a2): an ellipse segment (b1), a linear part (c1) a second ellipse segment (d), a further linear part (c2) and a third ellipse segment (b2).

Abstract: An optoelectronic semiconductor component, includes at least two optoelectronic semiconductor chips, which are located on a common mounting surface. An optical element is arranged downstream of the semiconductor chips in a main emission direction and is spaced from the semiconductor chips. In a direction transverse to the main emission direction the optical element has a transmission gradient in a transitional region. The transitional region does not overlap the semiconductor chips, when viewed in plan view onto the mounting surface.

Abstract: The present invention relates to an arrangement for emitting mixed light comprising at least three diodes, comprising a first drive circuit supplying the first diode with current via a first channel, wherein the first diode is of type A, wherein type A represents a diode configured to emit green and/or green-white light, wherein the drive circuit supplies the series-connected second and third diodes with current via a second channel, wherein the second diode is of type B, wherein type B represents a diode configured to emit red light, wherein the third diode is of type C, wherein type C represents a diode configured to emit blue and/or blue-white light, wherein the drive circuit is configured to change, depending on an operating parameter of at least one diode, the current supply for the first and/or second channel so as to counteract a colour locus shift of a diode.

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.