Abstract: The object of the invention is a process for the synthesis of nanotubes of transition metal dichalcogenides, of fullerene-like nanostructures of transition metal dichalcogenides, of nanotubes of transition metal dichalcogenides, filled with fullerene-like nanostructures of transition metal dichalcogenides, of quasi one-dimensional structures (nanowires, microwires and ribbons) of transition metal oxides and of quasi one-dimensional structures of transition metal dichalcogenides, consisting of fine crystallites of transition metal dichalcogenides. The process is characterized in that the synthesis occurs by the chemical transformation of quasi one-dimensional compounds with a sub-micron diameter, described by the formula M6CyHz, 8.2<y+z?10, where M is a transition metal (Mo, W, Ta, Nb), C is a chalcogen (S, Se, Te), H is a halogen (I).

Abstract: The object of the invention is a process for the synthesis of nanotubes of transition metal dichalcogenides, of fullerene-like nanostructures of transition metal dichalcogenides, of nanotubes of transition metal dichalcogenides, filled with fullerene-like nanostructures of transition metal dichalcogenides, of quasi one-dimensional structures (nanowires, microwires and ribbons) of transition metal oxides and of quasi one-dimensional structures of transition metal dichalcogenides, consisting of fine crystallites of transition metal dichalcogenides. The process is characterized in that the synthesis occurs by the chemical transformation of quasi one-dimensional compounds with a sub-micron diameter, described by the formula M6CyH2, 8.2<y+z<10, where M is a transition metal (Mo, W, Ta, Nb), C is a chalcogen (S, Se, Te), H is a halogen (I).

Abstract: The present Invention relates a quasi-one-dimensional material with sub-micron cross-section described by the formula M6CyHz, where the M=transition metal, C=chalcogen, H=halogen, and where y and z are integers such that 8.2<y+z<10, which materials are synthesized in a Single-step procedure at temperatures above 1000° C. The present invention also concerns the use of these materials in electronic, chemical, optical or mechanical applications.

Abstract: The present invention pertains to the use of quasi-one-dimensional transition metal ternary compounds MxHyHaz (where M is a transition metal Mo, W, Ta, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (I)) and of doped quasi-one-dimensional transition metal ternary compounds MxHyHaz, (where M=Ta, Ti, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (I)) with elements of group 1b (silver) (Ag), gold (Au), or copper (Cu)) as electron emitters under the influence of an external electric field. The percentage of quasi-one-dimensional transition metal ternary compounds doped with elements of group 1b in the active material ranges from 0.01 to 99.9 the rest consisting of additives in the form of conducting, non-conducting or semi-conducting compounds or composites. Electron emission takes place at a pressure below 1 mbar.

Abstract: A process of the synthesis of nanotubes of transition metal dichalcogenides by chemical transport with the addition of fullerences is provided to obtain nanotubes of transistion metal dichalcogenides. The nanotubes are hexagonally arranged in form of needle-like bundles. The process comprises chemical transport, in which the fullerences exist in the vapour phase. The chemical fullerences are used at conditions, in which the fullerences exist in the vapour phase. The chemical transport reaction occurs in a quartz ampoule, sealed at a pressure lower than 0.66 Pa. The temperature in the hot part of the ampoule is higher than 830° C.