Patents by Inventor Alessandra Leonhardt

Alessandra Leonhardt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250101579
    Abstract: The technology of the present disclosure generally relates to the field of capacitor devices. More particularly to Metal-Insulator-Metal capacitors (MIM CAPS) comprising a Hafnium Zirconium Oxide (HZO) layer, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the doped HZO layer on a substrate, comprises the steps of providing a substrate in a reaction chamber; executing one or more cycles whereby each cycle comprising contacting a hafnium precursor, a zirconium precursor, an oxygen reactant and a dopant precursor on at least part of the substrate by introducing the precursors and reactant in the reaction chamber; the dopant precursor comprises a dopant element having three or four valence electrons and an atomic radius which is less than the atomic radius of an Hf or Zr element of the HZO layer.
    Type: Application
    Filed: September 26, 2024
    Publication date: March 27, 2025
    Inventors: Alessandra Leonhardt, Matthew Surman, Rohit Abraham John, Fu Tang, Andrea llliberi, Vivek Koladi Mootheri, Leo Lukose, Varun Sharma, Jessica Akemi Cimada da Silva
  • Publication number: 20250079169
    Abstract: Methods for forming semiconductor structures including 2D-transition metal dichalcogenide layers, methods for forming gate stacks including metallic 2D-transition metal dichalcogenide layer, as well as methods for forming ternary phase 2D-transition metal dichalcogenide layer by an atomic layer deposition process (ALD) are disclosed.
    Type: Application
    Filed: August 26, 2024
    Publication date: March 6, 2025
    Inventors: Vincent Vandalon, Ren-Jie Chang, Giuseppe Alessio Verni, Alessandra Leonhardt, Michael Givens
  • Publication number: 20240339493
    Abstract: Structures and related methods and systems for forming structures. The structures comprise a proximal contact, a distal contact, a high-k dielectric, and at least one of a proximal barrier and a distal barrier. In some embodiments, at least one of the proximal barrier and the distal barrier is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction.
    Type: Application
    Filed: April 2, 2024
    Publication date: October 10, 2024
    Inventors: Alessandra Leonhardt, Varun Sharma, Vivek Koladi Mootheri, Leo Lukose, Andrea Illiberi, Jerome Innocent, Aditya Chauhan
  • Publication number: 20240234483
    Abstract: Methods of processing a substrate and related structures and systems. Described methods comprise forming a distal dipole layer on to a distal material layer; forming a high-k dielectric on the distal dipole layer; and, forming a proximal dipole layer on the high-k dielectric.
    Type: Application
    Filed: October 22, 2023
    Publication date: July 11, 2024
    Inventors: Alessandra Leonhardt, Michael Eugene Givens, Giuseppe Alessio Verni, Qi Xie
  • Publication number: 20240191347
    Abstract: Methods and related solids and systems are described. In some embodiments, methods as described herein can comprise executing a plurality of super cycles. Ones from the plurality of super cycles can comprise a magnesium sub cycle, an aluminum sub cycle, and a zinc sub cycle. At least one super cycle can comprise more than one magnesium sub cycle, aluminum sub cycle, or zinc sub cycle. Thus, layers having a tunable magnesium, aluminum, or zinc composition can be formed.
    Type: Application
    Filed: December 11, 2023
    Publication date: June 13, 2024
    Inventors: Monica Thukkaram, Aditya Chauhan, Andrea Illiberi, Vivek Koladi Mootheri, Leo Lukose, Alessandra Leonhardt, Michael Eugene Givens
  • Publication number: 20240136392
    Abstract: Methods of processing a substrate and related structures and systems. Described methods comprise forming a distal dipole layer on to a distal material layer; forming a high-k dielectric on the distal dipole layer; and, forming a proximal dipole layer on the high-k dielectric.
    Type: Application
    Filed: October 21, 2023
    Publication date: April 25, 2024
    Inventors: Alessandra Leonhardt, Michael Eugene Givens, Giuseppe Alessio Verni, Qi Xie
  • Patent number: 11898958
    Abstract: A spot on a layer of a 2D semiconductor material deposited on a substrate is irradiated so as to generate excitons, so that photons are emitted from the layer. The photoluminescence spectrum is recorded for different values of the charge carrier concentration in the layer. The modulation of the charge carrier concentration may be realized by modulating the output power of the light source used to irradiate the sample. The relation is recorded between the ratio of the photoluminescence intensity of a first peak in the spectrum related to radiative recombination from indirect bandgaps to the intensity of a second peak in the spectrum related to radiative recombination from direct bandgaps, and the carrier concentration. This relation is fitted to a model of the ratio that takes into account multiple recombination mechanisms, radiative and non-radiative. From this process, the trap density within the bandgap is derived.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: February 13, 2024
    Assignees: IMEC VZW, Katholieke Universitiet
    Inventors: Alessandra Leonhardt, Cesar Javier Lockhart De La Rosa, Stefan De Gendt, Cedric Huyghebaert, Steven Brems, Thomas Nuytten
  • Publication number: 20230377877
    Abstract: Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.
    Type: Application
    Filed: May 18, 2023
    Publication date: November 23, 2023
    Inventors: Alessandra Leonhardt, Matthew Surman, Perttu Sippola, Ranjith Karuparambil Ramachandran, Charles Dezelah, Michael Givens, Andrea Illiberi, Tatiana Ivanova, Leo Lukose, Lorenzo Bottiglieri, Suvidyakumar Vinod Homkar, Vivek Koladi Mootheri
  • Publication number: 20230006031
    Abstract: A noble metal liner and a metal-insulator-metal (MIM) capacitor (MIMCAP) are described along with the methods of manufacture or fabrication. The MIM capacitor includes a liner formed of a thin layer or film of a noble metal, which is only a few nanometers thick, e.g., a thickness in the range of about 0.5 nm to about 5 nm or more. In a finished device such as a MIM capacitor, the noble metal liner is sandwiched between a thicker electrode and the insulator, e.g., a layer or thin film of high or ultra high-k material, thereby providing a cap for the electrode to limit leakage currents in the device.
    Type: Application
    Filed: June 27, 2022
    Publication date: January 5, 2023
    Inventors: Alessandra Leonhardt, Michael Givens
  • Publication number: 20210356399
    Abstract: A spot on a layer of a 2D semiconductor material deposited on a substrate is irradiated so as to generate excitons, so that photons are emitted from the layer. The photoluminescence spectrum is recorded for different values of the charge carrier concentration in the layer. The modulation of the charge carrier concentration may be realized by modulating the output power of the light source used to irradiate the sample. The relation is recorded between the ratio of the photoluminescence intensity of a first peak in the spectrum related to radiative recombination from indirect bandgaps to the intensity of a second peak in the spectrum related to radiative recombination from direct bandgaps, and the carrier concentration. This relation is fitted to a model of the ratio that takes into account multiple recombination mechanisms, radiative and non-radiative. From this process, the trap density within the bandgap is derived.
    Type: Application
    Filed: May 18, 2021
    Publication date: November 18, 2021
    Inventors: Alessandra Leonhardt, Cesar Javier Lockhart De La Rosa, Stefan De Gendt, Cedric Huyghebaert, Steven Brems, Thomas Nuytten