Abstract: An oscillator is described, comprising at least one transistor having a first terminal connected to a power supply voltage. The oscillator comprises at least one inductive element connected to a second terminal of the transistor and to a bias voltage and at least one capacitive element coupled between a third terminal of the transistor and ground. The oscillator further comprises means to collect the output signal of the oscillator on the second terminal of the transistor. The oscillator is of the millimeter wave type, i.e., both the inductive element and the capacitive element are sized such that the oscillation frequency is between 30 and 300 gigahertz.

Abstract: An oscillator is described, comprising at least one transistor having a first terminal connected to a power supply voltage. The oscillator comprises at least one inductive element connected to a second terminal of the transistor and to a bias voltage and at least one capacitive element coupled between a third terminal of the transistor and ground. The oscillator further comprises means to collect the output signal of the oscillator on the second terminal of the transistor. The oscillator is of the millimeter wave type, i.e., both the inductive element and the capacitive element are sized such that the oscillation frequency is between 30 and 300 gigahertz.

Abstract: An oscillator is described, comprising at least one transistor having a first terminal connected to a power supply voltage. The oscillator comprises at least one inductive element connected to a second terminal of the transistor and to a bias voltage and at least one capacitive element coupled between a third terminal of the transistor and ground. The oscillator further comprises means to collect the output signal of the oscillator on the second terminal of the transistor. The oscillator is of the millimeter wave type, i.e., both the inductive element and the capacitive element are sized such that the oscillation frequency is between 30 and 300 gigahertz.

Abstract: An oscillator is described, comprising at least one transistor having a first terminal connected to a power supply voltage. The oscillator comprises at least one inductive element connected to a second terminal of the transistor and to a bias voltage and at least one capacitive element coupled between a third terminal of the transistor and ground. The oscillator further comprises means to collect the output signal of said oscillator on the second terminal of the transistor. The oscillator is of the millimeter wave type, i.e., both the inductive element and the capacitive element are sized such that the oscillation frequency is between 30 and 300 gigahertz.

Abstract: A circuit for a voltage controlled oscillator has a bridge structure including two cross-coupled N-type transistors and two cross-coupled P-type transistors. A current mirror is coupled to the two N-type cross-coupled transistors and configured to generate a bias current. An LC resonator is coupled in parallel between the two cross-coupled N-type transistors and the two P-type cross-coupled transistors. The LC resonator includes two pairs of differential inductors mutually coupled by a mutual inductance coefficient, each pair comprising a first inductor arranged on a respective branch of an external loop, and a second inductor arranged on a respective branch of an internal loop. A first varactor is coupled to a common node and a first branch of the internal loop. A second varactor is coupled to the common node and the second branch of the internal loop.