Patents by Inventor Alessandro Stano
Alessandro Stano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20170331247Abstract: Method for obtaining a laser diode (1) with vertical mirrors, includes the steps of providing (100) a substrate (2) having optical layers (4, 6, 8); performing (102) a first dry etching of said substrate (2), so as to get two opposite transversal facets (10) having a predetermined depth, which represent the lateral walls of a cavity (12); cleaning (104) the bottom of said cavity (12); depositing (106) a coating layer (52) on the whole substrate (2); performing (108) a second etching, so as to free the bottom of the cavity (12) from the coating layer (52); performing (110) a third deep etching of the bottom of the cavity (12); and removing (112) the coating layer (52), so as to obtain said diode (1) with transversal mirrors (10).Type: ApplicationFiled: May 10, 2017Publication date: November 16, 2017Inventors: Guido Roggero, Giancarlo Meneghini, Giuliana Morello, Alessandro Stano, Marzia Rosso
-
Patent number: 8982921Abstract: An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.Type: GrantFiled: February 7, 2013Date of Patent: March 17, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Ruiyu Fang, Giammarco Rossi, Alessandro Stano, Giuliana Morello, Paola-Ida Gotta, Roberto Paoletti, Pietro Della Casa, Giancarlo Meneghini
-
Patent number: 8927306Abstract: An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets.Type: GrantFiled: February 28, 2013Date of Patent: January 6, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Ruiyu Fang, Giuliana Morello, Giammarco Rossi, Roberto Paoletti, Alessandro Stano, Giancarlo Meneghini
-
Patent number: 8582618Abstract: A surface-emitting semiconductor laser device that includes an edge-emitting laser formed in layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.Type: GrantFiled: January 18, 2011Date of Patent: November 12, 2013Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Guido Alberto Roggero, Rui Yu Fang, Alessandro Stano, Giuliana Morello
-
Patent number: 8383435Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.Type: GrantFiled: January 12, 2010Date of Patent: February 26, 2013Assignee: Avago Technologies Fiber IP (Singapore) Pte. LtdInventors: Marzia Rosso, Alessandro Stano, Ruiyu Fang, Paolo Valenti, Pietro Della Casa, Simone Codato, Cesare Rigo, Claudio Coriasso
-
Publication number: 20120183007Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed in or on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.Type: ApplicationFiled: January 18, 2011Publication date: July 19, 2012Applicant: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.Inventors: Guido Alberto Roggero, Rui Yu Fang, Alessandro Stano, Giuliana Morello
-
Publication number: 20100112741Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.Type: ApplicationFiled: January 12, 2010Publication date: May 6, 2010Applicant: Avago Technologies Fiber IP Pte. Ltd.Inventors: Marzia Rosso, Alessandro Stano, Ruiyu Fang, Paolo Valenti, Pietro Della Casa, Simone Codato, Cesare Rigo, Claudio Coriasso
-
Patent number: 7668223Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.Type: GrantFiled: February 22, 2008Date of Patent: February 23, 2010Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd.Inventors: Marzia Rosso, Alessandro Stano, Ruiyu Fang, Paolo Valenti, Pietro Della Casa, Simone Codato, Cesare Rigo, Claudio Coriasso
-
Publication number: 20090213884Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.Type: ApplicationFiled: February 22, 2008Publication date: August 27, 2009Applicant: Avago Technologies Fiber IP Pte. Ltd.Inventors: Marzia Rosso, Alessandro Stano, Ruiyu Fang, Paolo Valenti, Pietro Della Casa, Simone Codato, Cesare Rigo, Claudio Coriasso
-
Patent number: 7424041Abstract: A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of passive waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive via the waveguides the emissions wavelengths from the lasers. A Multi Quantum Well (MQW) amplifier coupled to the coupler amplifies the emission wavelengths coupled via the optical coupler.Type: GrantFiled: April 29, 2004Date of Patent: September 9, 2008Assignee: Avago Technologies Fiber IP Pte Ltd.Inventors: Marina Meliga, Alessandro Stano, Paul Marshall Charles, Claudio Coriasso, Roberto Paoletti, Michele Agresti, Marco Vallone
-
Publication number: 20050244994Abstract: A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of passive waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive via the waveguides the emissions wavelengths from the lasers. A Multi Quantum Well (MQW) amplifier coupled to the coupler amplifies the emission wavelengths coupled via the optical coupler.Type: ApplicationFiled: April 29, 2004Publication date: November 3, 2005Inventors: Marina Meliga, Alessandro Stano, Paul Charles, Claudio Coriasso, Roberto Paoletti, Michele Agresti, Marco Vallone
-
Patent number: 5963688Abstract: An integrated optics non linear coupler presents on a surface a first and a second waveguide (2, 3) coupled contradirectionally by means of a distributed feedback grating (10). The first waveguide (2) defines an input port (4) and a first output port (5) of the device (transmission output) and the second waveguide (3) defines a second output port (6) of the device (reflection output). By means of an optical control signal injected into the device together with an information signal, the device can be brought to conditions of non-linear operation, thus making the grating (10) switch from transmitting to reflecting behaviour or vice versa with respect to a given wavelength.Type: GrantFiled: February 23, 1998Date of Patent: October 5, 1999Assignee: Cselt-Centro Studi Laboratori Telecomunicazioni S.P.A.Inventors: Domenico Campi, Claudio Coriasso, Luca Faustini, Alessandro Stano