Patents by Inventor Alessandro Vaccaro

Alessandro Vaccaro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming array contacts in semiconductor memories
    Patent number: 11056383
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: July 6, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • FORMING ARRAY CONTACTS IN SEMICONDUCTOR MEMORIES
    Publication number: 20180151415
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Application
    Filed: January 26, 2018
    Publication date: May 31, 2018
    Applicant: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • Forming array contacts in semiconductor memories
    Patent number: 9899254
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: February 20, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • FORMING ARRAY CONTACTS IN SEMICONDUCTOR MEMORIES
    Publication number: 20170200635
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Application
    Filed: March 28, 2017
    Publication date: July 13, 2017
    Applicant: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • Forming array contacts in semiconductor memories
    Patent number: 9627251
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: April 18, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • FORMING ARRAY CONTACTS IN SEMICONDUCTOR MEMORIES
    Publication number: 20150262867
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Application
    Filed: May 27, 2015
    Publication date: September 17, 2015
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • Forming array contacts in semiconductor memories
    Patent number: 9059261
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: June 16, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • FORMING ARRAY CONTACTS IN SEMICONDUCTOR MEMORIES
    Publication number: 20140284812
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Application
    Filed: June 11, 2014
    Publication date: September 25, 2014
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • Forming array contacts in semiconductor memories
    Patent number: 8759980
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: June 24, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • FORMING ARRAY CONTACTS IN SEMICONDUCTOR MEMORIES
    Publication number: 20140048956
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Application
    Filed: October 29, 2013
    Publication date: February 20, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
  • Forming array contacts in semiconductor memories
    Patent number: 8569891
    Abstract: Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: October 29, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Roberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini