Abstract: Thin, uniform films of niobium and tantalum complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor containing metal M' ions and metal M" ions, where metal M' is Li, Na, or K and metal M" is Nb or Ta, and contacting the vapor with the substrate at a temperature sufficiently high to decompose the precursor and form an M'M" metal oxide.

Abstract: Thin, uniform films of complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor containing metal M' ions and metal M" ions, where metal M' is Li, Na, K, Ba, Mg, Ca, Sr, or Pb, and metal M" is V, Nb, Ta, or Ti, and contacting the vapor with the substrate at a temperature sufficiently high to decompose the precursor and form an M'M" metal oxide.

Abstract: Thin, uniform films of complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor, which is the reaction product of a metal M' beta-diketonate and a metal M" alkoxide, where metal M' is Li, Na, K, Ba, Mg, Ca, Sr, or Pb, and metal M" is V, Nb, Ta, or Ti, and contacting the vapor with the substrate at a temperature sufficiently high to decompose the precursor and form an M'M" metal oxide. Alternatively, compounds in which a M" metal is attached to a beta-diketonate, and an M' metal is attached to an alkoxide, are used to form the reaction product vapor precursor.

Abstract: The invention comprises applying to a substrate a precursor of an organo-metallic compound, the precursor preferably consists of one or more pairs of ligand substituted Group III and V elements. The precursor is decomposed and deposits onto a receiving layer held at the decomposing temperature of the vaporized material.