Patents by Inventor Alex Buxbaum
Alex Buxbaum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11848172Abstract: The present invention relates to a method for measuring a sample with a microscope, the method comprising scanning the sample using a focusing plane having a first angle with respect to a top surface of the sample and computing a confidence distance based on the first angle. The method further comprises selecting at least one among a plurality of alignment markers on the sample for performing a lateral alignment of the scanning step and/or for performing a lateral alignment of an output of the scanning step. In particular, the at least one alignment marker selected at the selecting step is chosen among the alignment markers placed within the confidence distance from an intersection of the focusing plane with the top surface.Type: GrantFiled: November 9, 2021Date of Patent: December 19, 2023Assignee: Carl Zeiss SMT GmbHInventors: Dmitry Klochkov, Chuong Huynh, Thomas Korb, Alex Buxbaum, Amir Avishai
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Publication number: 20230343619Abstract: Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.Type: ApplicationFiled: April 26, 2022Publication date: October 26, 2023Inventors: Hans-Michael Stiepan, Thomas Korb, Eugen Foca, Alex Buxbaum, Dmitry Klochkov, Jens Timo Neumann
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Publication number: 20230267627Abstract: The present disclosure provides a method of transferring alignment information from a first set of images to a second set of images, a respective computer program product and a respective inspection device. A first set of cross-section images in a first imaging mode is obtained, the first cross-section images being taken at times Tai. A second set of cross-section images in a second imaging mode is obtained, the second cross-section images being taken at times Tbj, the times Tbj differing from the times Tai. Obtaining the first and second sets of cross-section images comprises subsequently removing a cross-section surface layer of a sample to make a new cross-section accessible for imaging, and imaging the new cross-section of the sample in the first imaging mode or in the second imaging mode. Switching is performed between the first and second imaging modes while obtaining the first and second sets of cross-section images.Type: ApplicationFiled: May 1, 2023Publication date: August 24, 2023Inventors: Thomas Korb, Alex Buxbaum, Eugen Foca, Jens Timo Neumann, Amir Avishai, Dmitry Klochkov
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Publication number: 20230196189Abstract: A system and a method for measuring of parameter values of semiconductor objects within wafers with increased throughput include using a modified machine learning algorithm to extract measurement results from instances of semiconductor objects. A training method for training the modified machine learning algorithm includes reducing a user interaction. The method can be more flexible and robust and can involve less user interaction than conventional methods. The system and method can be used for quantitative metrology of integrated circuits within semiconductor wafers.Type: ApplicationFiled: March 22, 2022Publication date: June 22, 2023Inventors: Alexander Freytag, Oliver Malki, Johannes Persch, Thomas Korb, Jens Timo Neumann, Amir Avishai, Alex Buxbaum, Eugen Foca, Dmitry Klochkov
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Publication number: 20230145897Abstract: The present invention relates to a method for measuring a sample with a microscope, the method comprising scanning the sample using a focusing plane having a first angle with respect to a top surface of the sample and computing a confidence distance based on the first angle. The method further comprises selecting at least one among a plurality of alignment markers on the sample for performing a lateral alignment of the scanning step and/or for performing a lateral alignment of an output of the scanning step. In particular, the at least one alignment marker selected at the selecting step is chosen among the alignment markers placed within the confidence distance from an intersection of the focusing plane with the top surface.Type: ApplicationFiled: November 9, 2021Publication date: May 11, 2023Inventors: Dmitry Klochkov, Chuong Huynh, Thomas Korb, Alex Buxbaum, Amir Avishai
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Publication number: 20220392793Abstract: The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 ?m below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.Type: ApplicationFiled: August 16, 2022Publication date: December 8, 2022Inventors: Alex Buxbaum, Eugen Foca, Chuong Huynh, Dmitry Klochkov, Thomas Korb, Jens Timo Neumann, Baohua Niu
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Publication number: 20220230899Abstract: A method of determining a size of a contact area between a first 3D structure and a second 3D structure in an integrated semiconductor sample, includes the following steps: obtaining at least a first cross section image and a second cross section image parallel to the first cross section image, wherein obtaining the first and second cross section images includes subsequently removing a cross section surface layer of the integrated semiconductor sample using a focused ion beam to make a new cross section accessible for imaging, and imaging the new cross section of the integrated semiconductor sample with an imaging device; performing image registration of the obtained cross section images and obtaining a 3D data set; determining a 3D model representing the first 3D structure and the second 3D structure in the 3D data set; and determining a relative overlap of the first 3D structure with the second 3D structure based on the 3D model.Type: ApplicationFiled: April 5, 2022Publication date: July 21, 2022Inventors: Alex Buxbaum, Amir Avishai, Dmitry Klochkov, Thomas Korb, Eugen Foca, Keumsil Lee
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Publication number: 20220223445Abstract: A 3D tomographic inspection method for the inspection of semiconductor features in an inspection volume of a semiconductor wafer includes obtaining a 3D tomographic image, and selecting a plurality of 2D cross section images. The method also includes identifying contours of HAR structures, and extracting deviation parameters. The deviation parameters describe fabrication errors such as displacement, deviation in radius or diameter, area or shape.Type: ApplicationFiled: March 29, 2022Publication date: July 14, 2022Inventors: Amir Avishai, Alex Buxbaum, Eugen Foca, Dmitry Klochkov, Thomas Korb, Keumsil Lee
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Publication number: 20220138973Abstract: A three-dimensional circuit pattern inspection technique includes cross sectioning integrated circuits for obtaining a 3D volume image of an integrated semiconductor sample. The method employs a feature based alignment of cross section images based on features of an integrated semiconductor sample. A computer program product and apparatus are provided.Type: ApplicationFiled: December 2, 2021Publication date: May 5, 2022Inventors: Thomas Korb, Jens Timo Neumann, Eugen Foca, Alex Buxbaum, Amir Avishai, Keumsil Lee, Ingo Schulmeyer, Dmitry Klochkov
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Patent number: 7244334Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: GrantFiled: July 15, 2005Date of Patent: July 17, 2007Assignee: Applied Materials, Inc.Inventors: Alex Buxbaum, Melvin W. Montgomery
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Patent number: 7208249Abstract: We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.Type: GrantFiled: September 30, 2002Date of Patent: April 24, 2007Assignee: Applied Materials, Inc.Inventors: Melvin Warren Montgomery, Alex Buxbaum, Scott Edward Fuller, Cecilia Annette Montgomery
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Patent number: 7077973Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle in a first orientation on a reticle support in a processing chamber, wherein the reticle comprises a metal photomask layer formed on an optically transparent substrate, and a patterned resist material deposited on the metal photomask layer, etching the metal photomask layer in the first orientation, positioning the reticle in at least a second orientation, and etching the metal photomask layer in the at least second orientation.Type: GrantFiled: April 18, 2003Date of Patent: July 18, 2006Assignee: Applied Materials, Inc.Inventors: Alex Buxbaum, Bjorn Skyberg
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Patent number: 6998206Abstract: One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: GrantFiled: January 15, 2004Date of Patent: February 14, 2006Assignee: Applied Materials, Inc.Inventors: Scott Fuller, Melvin W. Montgomery, Jeffrey A. Albelo, Alex Buxbaum
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Publication number: 20050250023Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: ApplicationFiled: July 15, 2005Publication date: November 10, 2005Inventors: Alex Buxbaum, Melvin Montgomery
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Patent number: 6931619Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: GrantFiled: March 24, 2003Date of Patent: August 16, 2005Assignee: Applied Materials, Inc.Inventors: Alex Buxbaum, Melvin W. Montgomery
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Publication number: 20040209477Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle in a first orientation on a reticle support in a processing chamber, wherein the reticle comprises a metal photomask layer formed on an optically transparent substrate, and a patterned resist material deposited on the metal photomask layer, etching the metal photomask layer in the first orientation, positioning the reticle in at least a second orientation, and etching the metal photomask layer in the at least second orientation.Type: ApplicationFiled: April 18, 2003Publication date: October 21, 2004Applicant: Applied Materials, Inc.Inventors: Alex Buxbaum, Bjorn Skyberg
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Publication number: 20040146790Abstract: One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask, which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: ApplicationFiled: January 15, 2004Publication date: July 29, 2004Inventors: Scott Fuller, Melvin W. Montgomery, Jeffrey A. Albelo, Alex Buxbaum
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Publication number: 20040063003Abstract: We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.Type: ApplicationFiled: September 30, 2002Publication date: April 1, 2004Applicant: Applied Materials, Inc.Inventors: Melvin Warren Montgomery, Alex Buxbaum, Scott Edward Fuller, Cecilia Annette Montgomery
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Patent number: 6703169Abstract: One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: GrantFiled: July 23, 2001Date of Patent: March 9, 2004Assignee: Applied Materials, Inc.Inventors: Scott Fuller, Melvin W. Montgomery, Jeffrey A. Albelo, Alex Buxbaum
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Publication number: 20030180634Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: ApplicationFiled: March 24, 2003Publication date: September 25, 2003Inventors: Alex Buxbaum, Melvin W. Montgomery