Patents by Inventor Alex Ceruzzi
Alex Ceruzzi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8022495Abstract: A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, and a first type window layer disposed over the intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer is disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.Type: GrantFiled: April 8, 2009Date of Patent: September 20, 2011Assignee: Emcore CorporationInventors: Xiang Gao, Alex Ceruzzi, Linlin Liu, Stephen Schwed
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Publication number: 20090230497Abstract: A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.Type: ApplicationFiled: April 8, 2009Publication date: September 17, 2009Inventors: Xiang Gao, Alex Ceruzzi, Linlin Liu, Stephen Schwed
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Patent number: 7538403Abstract: A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.Type: GrantFiled: September 19, 2005Date of Patent: May 26, 2009Assignee: Emcore CorporationInventors: Xiang Gao, Alex Ceruzzi, Linlin Liu, Stephen Schwed
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Patent number: 7439599Abstract: A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.Type: GrantFiled: March 14, 2005Date of Patent: October 21, 2008Assignee: Emcore CorporationInventors: Xiang Gao, Alex Ceruzzi, Steve Schwed, Linlin Liu, Mark Gottfried
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Publication number: 20060154455Abstract: A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.Type: ApplicationFiled: March 9, 2006Publication date: July 13, 2006Applicant: Emcore CorporationInventors: Shiping Guo, David Gotthold, Milan Pophristic, Boris Peres, Ivan Eliashevich, Bryan Shelton, Alex Ceruzzi, Michael Murphy, Richard Stall
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Publication number: 20060151868Abstract: A packaged semiconductor device, in particular a gallium nitride semiconductor structure including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of the lower semiconductor layer. The semiconductor structure includes a plurality of mesas projecting upwardly from the lower layer, each of the mesas including a portion of the upper layer and defining an upper contact surface separated form adjacent mesas by a portion of the lower layer surface. The device further includes a die mounting support, wherein the bottom surface of the die is attached to the top surface of the die mounting support; and a plurality of spaced external conductors extending from the support, at least once of said spaced external conductors having a bond wire post at one end thereof; with a bonding wire extending between the bond wire post and a contact region to the top surface of the plurality of mesas.Type: ApplicationFiled: January 10, 2005Publication date: July 13, 2006Inventors: TingGang Zhu, Bryan Shelton, Marek Pabisz, Mark Gottfried, Linlin Liu, Boris Peres, Alex Ceruzzi
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Publication number: 20060076589Abstract: A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.Type: ApplicationFiled: March 14, 2005Publication date: April 13, 2006Inventors: Xiang Gao, Alex Ceruzzi, Steve Schwed, Linlin Liu, Mark Gottfried
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Publication number: 20060060933Abstract: A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.Type: ApplicationFiled: September 19, 2005Publication date: March 23, 2006Inventors: Xiang Gao, Alex Ceruzzi, Linlin Liu, Stephen Schwed
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Publication number: 20050202661Abstract: A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.Type: ApplicationFiled: September 7, 2004Publication date: September 15, 2005Inventors: Alex Ceruzzi, Milan Pophristic, Bryan Shelton, Linlin Liu, Michael Murphy, Ting Zhu
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Publication number: 20050179104Abstract: A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.Type: ApplicationFiled: February 17, 2004Publication date: August 18, 2005Applicant: Emcore CorporationInventors: Bryan Shelton, Linlin Liu, Alex Ceruzzi, Michael Murphy, Milan Pophristic, Boris Peres, Richard Stall, Xiang Gao, Ivan Eliashevich
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Publication number: 20050179107Abstract: A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.Type: ApplicationFiled: February 17, 2004Publication date: August 18, 2005Applicant: Emcore CorporationInventors: Milan Pophristic, Michael Murphy, Richard Stall, Bryan Shelton, Linlin Liu, Alex Ceruzzi