Abstract: High performance photovoltaic devices are provided. Certain embodiments relate to the use of Boron-Nitride (BN) thin films as anti-reflection coating (ARC) material on Si and GaAs solar cells. A low and wide reflectance window covering a large energy range of the solar spectrum is available. For a large part of the useful solar spectrum, the index of refraction of the grown BN thin films remains constant at about 2.8. In another embodiment, a BN ARC is applied directly on ordinary window glass providing the device's mechanical strength.

Abstract: High performance photovoltaic devices are provided. Certain embodiments relate to the use of Boron-Nitride (BN) thin films as anti-reflection coating (ARC) material on Si and GaAs solar cells. A low and wide reflectance window covering a large energy range of the solar spectrum is available. For a large part of the useful solar spectrum, the index of refraction of the grown BN thin films remains constant at about 2.8. In another embodiment, a BN ARC is applied directly on ordinary window glass providing the device's mechanical strength.

Abstract: High performance photovoltaic devices are provided. Certain embodiments relate to the use of Boron-Nitride (BN) thin films as anti-reflection coating (ARC) material on Si and GaAs solar cells. A low and wide reflectance window covering a large energy range of the solar spectrum is available. For a large part of the useful solar spectrum, the index of refraction of the grown BN thin films remains constant at about 2.8. In another embodiment, a BN ARC is applied directly on ordinary window glass providing the device's mechanical strength.

Abstract: High performance photovoltaic devices are provided. Certain embodiments relate to the use of Boron-Nitride (BN) thin films as anti-reflection coating (ARC) material on Si and GaAs solar cells. A low and wide reflectance window covering a large energy range of the solar spectrum is available. For a large part of the useful solar spectrum, the index of refraction of the grown BN thin films remains constant at about 2.8. In another embodiment, a BN ARC is applied directly on ordinary window glass providing the device's mechanical strength.

Abstract: A thermophotovoltaic cell is provided containing strained or lattice-matched quantum wells that have a bandgap smaller than the bandgap of the InGaAs alloy. The alloy is lattice-matched to the substrate. These narrow bandgap quantum wells provide more efficient conversion of IR emission from a black body or other emitter by converting energy from a wider range of wavelengths than a conventional single junction cell. The thickness of the quantum well region and the individual thickness of the individual quantum wells are chosen to avoid lattice mismatch defects which cause degradation of thick conventional lattice mismatched devices.