Abstract: A charged particle beam apparatus with a charged particle source to generate a primary charged particle beam, a sample holder to hold a sample for impingement of the primary charged particle beam on the sample, a pulsed laser configured to generate a pulsed light beam for impingement onto an area on the sample, and an electrode to collect electrons emitted from the sample in a non-linear photoemission.

Abstract: A charged particle beam apparatus with a charged particle source to generate a primary charged particle beam, a sample holder to hold a sample for impingement of the primary charged particle beam on the sample, a pulsed laser configured to generate a pulsed light beam for impingement onto an area on the sample, and an electrode to collect electrons emitted from the sample in a non-linear photoemission.

Abstract: A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

Abstract: A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.

Abstract: A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.

Abstract: A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.

Abstract: A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.

Abstract: A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask

Abstract: The present invention provides, according to a first aspect, a method for the examination of specimen with a beam of charged particles. The method provides one or more images of the specimen made with different view angles, so that, compared to a single image of the specimen, a lot of additional information about the specimen can be accessed. The different view angles (angles of incidence) are achieved by tilting the beam between the two images and moving the specimen to a new position so that the displacement of the beam caused by the tilting of the beam is compensated. Accordingly, while displaying/recording the second image the beam scans over the same area as it has scanned while displaying/recording the first image.

Abstract: A method for inspecting a reticle, that includes the following stages: providing a reticle designed to be exposed by light of a first wavelength during a photolithography process; defining optical characteristics of an inspection system, whereas the optical characteristics include a second wavelength that differs from the first wavelength; and configuring an inspection system in response to the defined optical characteristics. An inspection system that includes: an illumination path adapted to direct light of a second wavelength towards a reticle designed to be exposed by light of a first wavelength during a photolithography process; a collection path adapted to collect light transmitted through the reticle; whereas at least one of the illumination path and collection path is configurable such that the inspection system emulates the photolithographic process while utilizing light of the second wavelength.

Abstract: A reticle inspection system and method for complete and fast inspection of phase shift mask reticles, both for incoming inspection and for periodic and pre-exposure inspection tool, is employable by facilities such as mask shops as an inspection tool compatible to the mask shop's customers. The inventive system and method detect phase errors in an aerial image by acquiring the image of the phase shift mask under the same optical conditions as the exposure conditions (i.e. wavelength, numerical aperture, sigma, and illumination aperture type). Images are acquired at a positive out-of-focus and a negative out-of-focus, and are compared in order to enhance possible phase error. The term “phase error” refers to the acceptable range of the phase deviation from the programmed 180° on the phase shift mask, by using the exposure system to achieve the image on the photoresist, satisfying the requirements of the wafer specification.

Abstract: A method for inspecting a reticle, that includes the following stages: providing a reticle designed to be exposed by light of a first wavelength during a photolithography process; defining optical characteristics of an inspection system, whereas the optical characteristics include a second wavelength that differs from the first wavelength; and configuring an inspection system in response to the defined optical characteristics. An inspection system that includes: an illumination path adapted to direct light of a second wavelength towards a reticle designed to be exposed by light of a first wavelength during a photolithography process; a collection path adapted to collect light transmitted through the reticle; whereas at least one of the illumination path and collection path is configurable such that the inspection system emulates the photolithographic process while utilizing light of the second wavelength.

Abstract: The present invention provides, according to a first aspect, a method for the examination of specimen with a beam of charged particles. The method provides one or more images of the specimen made with different view angles, so that, compared to a single image of the specimen, a lot of additional information about the specimen can be accessed. The different view angles (angles of incidence) are achieved by tilting the beam between the two images and moving the specimen to a new position so that the displacement of the beam caused by the tilting of the beam is compensated. Accordingly, while displaying/recording the second image the beam scans over the same area as it has scanned while displaying/recording the first image.

Abstract: A reticle inspection system and method for complete and fast inspection of phase shift mask reticles, both for incoming inspection and for periodic and pre-exposure inspection tool, is employable by facilities such as mask shops as an inspection tool compatible to the mask shop's customers. The inventive system and method detect phase errors in an aerial image by acquiring the image of the phase shift mask under the same optical conditions as the exposure conditions (i.e. wavelength, numerical aperture, sigma, and illumination aperture type). Images are acquired at a positive out-of-focus and a negative out-of-focus, and are compared in order to enhance possible phase error. The term “phase error” refers to the acceptable range of the phase deviation from the programmed 180° on the phase shift mask, by using the exposure system to achieve the image on the photoresist, satisfying the requirements of the wafer specification.