Abstract: Flavonoids are obtained from plants that overexpress an ANT1 gene compared to wild-type plants. The plant may be a transgenic plant that contains a transformation vector that causes the overexpression of ANT1. Alternatively, the plant can be selectively bred to have an allele of or mutation in an endogenous ANT1 gene that causes the overexpression of ANT1 compared to plants lacking the allele or mutation.

Abstract: The present invention is directed to plants that display a pathogen resistance phenotype due to altered expression of a PPR1 nucleic acid. The invention is further directed to methods of generating plants with a pathogen resistance phenotype.

Abstract: A method of fabricating semiconductor devices is provided. A plurality of gate structures is formed over a substrate. A source region and a drain region are formed in the substrate and adjacent to sidewalls of each gate structure. A self-aligned salicide block (SAB) layer is formed over the substrate to cover the gate structures and the exposed surface of the substrate. An anneal process is performed. The SAB layer creates a tension stress during the anneal process so that the substrate under the gate structures is subjected to the tension stress. A portion of the SAB layer is removed to expose a portion of the gate structures and a portion of the surface of the substrate. A salicide process is performed.

Abstract: The present invention is directed to plants that display a pathogen resistance phenotype due to altered expression of a PPR1 nucleic acid. The invention is further directed to methods of generating plants with a pathogen resistance phenotype.

Abstract: A method of fabricating semiconductor devices is provided. A plurality of gate structures is formed over a substrate. A source region and a drain region are formed in the substrate and adjacent to sidewalls of each gate structure. A self-aligned salicide block (SAB) layer is formed over the substrate to cover the gate structures and the exposed surface of the substrate. An anneal process is performed. The SAB layer creates a tension stress during the anneal process so that the substrate under the gate structures is subjected to the tension stress. A portion of the SAB layer is removed to expose a portion of the gate structures and a portion of the surface of the substrate. A salicide process is performed.

Abstract: The invention is directed to a method of multigenerational analysis of plants modified by insertional mutagenesis, and a method for associating plant mutant trait and genotype information. The invention is further directed to a method for managing data pertaining to plant mutant trait and genotype information in a database. The invention is further directed to a system for managing plant mutant trait and genotype information in a database, a system for allowing users to associate plant trait and genotype information, a system for facilitating business transactions with a user regarding plant materials or a gene sequence of interest to user and a computer-readable medium embodying a program of instructions for execution by a computer for implementing a system for allowing users to associate plant trait and genotype information.

Abstract: The invention is directed to a method of multigenerational analysis of plants modified by insertional mutagenesis, and a method for associating plant mutant trait and genotype information. The invention is further directed to a method for managing data pertaining to plant mutant trait and genotype information in a database. The invention is further directed to a system for managing plant mutant trait and genotype information in a database, a system for allowing users to associate plant trait and genotype information, a system for facilitating business transactions with a user regarding plant materials or a gene sequence of interest to user and a computer-readable medium embodying a program of instructions for execution by a computer for implementing a system for allowing users to associate plant trait and genotype information.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method for forming a semiconductor structure of the present invention may include the following steps. First, a substrate is provided, wherein a gate is formed over the substrate, and a plurality of offspacers are formed over a sidewall of the gate. Then, a source/drain trench is formed in the substrate at two sides of the gate respectively. Next, an outermost offspacer of the offspacers is removed to expose a flat surface on a surface of the substrate. Thereafter, the source/drain trenches are filled to form a source/drain region. Then, a lightly doped drain (LDD) region is formed in a portion of the substrate under the flat surface.

Abstract: A tool belt for fastening about a wearer's torso comprises a support belt having a first end and a second end each having attachment means for securing the belt about the wearer's torso. A plurality of individual cushion pads is attached to the support belt on a proximal surface of the support belt. At least one of a plurality of magnetic elements is associated with one of the individual cushion pads. The individual cushion pad has an indentation formed in a proximal surface thereof, shaped to correspond to a shape of the at least one magnetic element, and the at least one magnetic element is at least partially disposed within the indentation in the cushion pad to restrict movement of the magnetic element relative to the cushion pad while the belt is in use about the wearer's torso.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method for forming a semiconductor structure of the present invention may include the following steps. First, a substrate is provided, wherein a gate is formed over the substrate, and a plurality of offspacers are formed over a sidewall of the gate. Then, a source/drain trench is formed in the substrate at two sides of the gate respectively. Next, an outermost offspacer of the offspacers is removed to expose a flat surface on a surface of the substrate. Thereafter, the source/drain trenches are filled to form a source/drain region. Then, a lightly doped drain (LDD) region is formed in a portion of the substrate under the flat surface.

Abstract: A method of fabricating semiconductor devices is provided. A plurality of gate structures is formed over a substrate. A source region and a drain region are formed in the substrate and adjacent to sidewalls of each gate structure. A self-aligned salicide block (SAB) layer is formed over the substrate to cover the gate structures and the exposed surface of the substrate. An anneal process is performed. The SAB layer creates a tension stress during the anneal process so that the substrate under the gate structures is subjected to the tension stress. A portion of the SAB layer is removed to expose a portion of the gate structures and a portion of the surface of the substrate. A salicide process is performed.

Abstract: The present invention is directed to a novel plant phenotype, designated CURLY (CUR), a nucleic acid sequence expressed in plants demonstrating the CUR phenotype and the corresponding amino acid sequence. Also provided are plant cells and plants that exhibit modified CUR expression.

Abstract: The present invention is directed to a novel plant phenotype, designated DWARF AND LATE FLOWERING 2 (DLF2), a nucleic acid sequence expressed in plants demonstrating the DLF2 phenotype and the corresponding amino acid sequence. Also provided are plant cells and plants that exhibit modified DLF2 expression.

Abstract: The invention is directed to a method of multigenerational analysis of plants modified by insertional mutagenesis, and a method for associating plant mutant trait and genotype information. The invention is further directed to a method for managing data pertaining to plant mutant trait and genotype information in a database. The invention is further directed to a system for managing plant mutant trait and genotype information in a database, a system for allowing users to associate plant trait and genotype information, a system for facilitating business transactions with a user regarding plant materials or a gene sequence of interest to user and a computer-readable medium embodying a program of instructions for execution by a computer for implementing a system for allowing users to associate plant trait and genotype information.

Abstract: The present invention is directed to a novel plant phenotype, designated PAGODA (PGD), a nucleic acid sequence expressed in plants demonstrating the PGD phenotype and the corresponding amino acid sequence. Also provided are plant cells and plants that exhibit modified PGD expression.

Abstract: The present invention is directed to a novel plant phenotype, designated DWARF AND LATE FLOWERING 2 (DLF2), a nucleic acid sequence expressed in plants demonstrating the DLF2 phenotype and the corresponding amino acid sequence. Also provided are plant cells and plants that exhibit modified DLF2 expression.

Abstract: The present invention is directed to a novel plant phenotype, designated CURLY (CUR), a nucleic acid sequence expressed in plants demonstrating the CUR phenotype and the corresponding amino acid sequence. Also provided are plant cells and plants that exhibit modified CUR expression.

Abstract: The present invention is directed to a novel plant phenotype, designated PAGODA (PGD), a nucleic acid sequence expressed in plants demonstrating the PGD phenotype and the corresponding amino acid sequence. Also provided are plant cells and plants that exhibit modified PGD expression.