Abstract: An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.

Abstract: An example thin-film transistor includes a source and a gate. The source includes a body of source metal and a body of capacitance-tuning material disposed on the body of source metal. The body of capacitance-tuning material is configured to control a capacitance between the source and the gate. A drain of the thin-film transistor may also include a body of capacitance-tuning material. Capacitance-tuning material may be provided outside the source/drain, for example, adjacent a gate dielectric material. The thin-film transistor may further include a body of reducing material to draw oxygen out of other materials of the thin-film transistor. The thin-film transistor may further include a body of hardmask material used during the making of the thin-film transistor.

Abstract: A oxide semiconductor channel stack for semiconductor devices having an oxide semiconductor channel layer, an optional mediating material layer formed over the oxide semiconductor channel layer and a setting layer formed over the mediating material layer, if present, or over the oxide semiconductor channel layer. The setting layer draws surplus oxygen atoms from an adjacent region of the oxide semiconductor to reduce defects therein, thus increasing the current carrying capacity through a channel formed in the oxide semiconductor channel layer. The setting layer can also serve as a contact, such as a gate contact, or a separate metal layer can be formed over the setting layer to serve as a contact.

Abstract: A method is disclosed. The method includes transmitting a verification request comprising a wallet account identifier associated with a digital wallet to a smart contract on a blockchain network or a smart contract application associated with the smart contract. The smart contract or the smart contract application verifies the wallet account identifier using a blockchain on the blockchain network. The method also includes receiving from the smart contract on the blockchain network or the smart contract application, a verification response verifying the wallet account. The method further includes initiating transmitting to an authorizing entity computer, an authorization request message comprising a credential associated with the wallet account identifier.

Abstract: In a thin-film transistor, a body of tuning material is provided between a substrate and a body of channel material. The body of tuning material removes undesirable chemical species from the body of channel material, a body of gate dielectric material, or both the body of channel material and the body of gate dielectric material. A body of blocking material may be provided to inhibit such tuning that may be caused by a body of gate material.

Abstract: A thin-film transistor includes a source including a body of source material and a source carrier reservoir formed of reservoir material, a drain, and a layer of channel material positioned between source and the drain. A hardmask material may be used to pattern the source and drain. Remains of the hardmask may form the source carrier reservoir. The channel material and the reservoir material may be the same material, such as tin oxide.

Abstract: An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.

Abstract: An example thin-film transistor includes a source and a gate. The source includes a body of source metal and a body of capacitance-tuning material disposed on the body of source metal. The body of capacitance-tuning material is configured to control a capacitance between the source and the gate. A drain of the thin-film transistor may also include a body of capacitance-tuning material. Capacitance-tuning material may be provided outside the source/drain, for example, adjacent a gate dielectric material. The thin-film transistor may further include a body of reducing material to draw oxygen out of other materials of the thin-film transistor. The thin-film transistor may further include a body of hardmask material used during the making of the thin-film transistor.

Abstract: A Schottky source-gated thin film transistor is provided including: a drain contact; an insulating substrate; a source contact made of a Schottky metal; a channel connecting the buried source contact to the drain, the channel made of ZnO; and a Schottky source barrier formed between the source contact and the channel; and a gate; wherein the source contact is positioned below the channel.

Abstract: A Schottky source-gated thin film transistor is provided including: a drain contact; an insulating substrate; a source contact made of a Schottky metal; a channel connecting the buried source contact to the drain, the channel made of ZnO; and a Schottky source barrier formed between the source contact and the channel; and a gate; wherein the source contact is positioned below the channel.