Patents by Inventor Alex MOHANDAS

Alex MOHANDAS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11698747
    Abstract: First data is received from a first host system and second data is received from a second host system. A composite signal is generated to represent both the first data received from the first host system and the second data received from the second host system. The composite signal comprises a series of signal pulses at multiple levels. A first level and a second level in the composite signal represent values from the first data received from the first host system. A third level and a fourth level in the composite signal represent values from the second data received from the second host system. The composite signal is provided to the memory device.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: July 11, 2023
    Assignee: Micron Technology, Inc.
    Inventor: Alex Mohandas
  • Publication number: 20220137857
    Abstract: First data is received from a first host system and second data is received from a second host system. A composite signal is generated to represent both the first data received from the first host system and the second data received from the second host system. The composite signal comprises a series of signal pulses at multiple levels. A first level and a second level in the composite signal represent values from the first data received from the first host system. A third level and a fourth level in the composite signal represent values from the second data received from the second host system. The composite signal is provided to the memory device.
    Type: Application
    Filed: November 3, 2020
    Publication date: May 5, 2022
    Inventor: Alex Mohandas
  • Patent number: 11216191
    Abstract: A storage device includes a nonvolatile memory device, and a controller that receives a write command, data, and a signature associated with the data from an external device, generates a first hash value from the data, generates a second hash value from the signature, generates an output hash value based on the first hash value and the second hash, and detects whether the data received from the external device are previously written in the nonvolatile memory device, by using the output hash value.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: January 4, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shiva Pahwa, Alex Mohandas
  • Publication number: 20200393975
    Abstract: A storage device includes a nonvolatile memory device, and a controller that receives a write command, data, and a signature associated with the data from an external device, generates a first hash value from the data, generates a second hash value from the signature, generates an output hash value based on the first hash value and the second hash, and detects whether the data received from the external device are previously written in the nonvolatile memory device, by using the output hash value.
    Type: Application
    Filed: March 2, 2020
    Publication date: December 17, 2020
    Inventors: SHIVA PAHWA, ALEX MOHANDAS
  • Patent number: 10416895
    Abstract: A storage device may include one or more nonvolatile memory devices and a controller. The nonvolatile memory devices may be configured to store target data. When the number of operations which is performed on the target data is equal to or greater than a first reference value, the controller may be configured to store duplicated data, which is identical to some or all portions of the target data, in the nonvolatile memory devices. When the number of operations performed on the target data becomes equal to or smaller than a second reference value after the duplicated data is generated, the controller may be configured to invalidate the duplicated data.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: September 17, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Shiva Pahwa, Alex Mohandas
  • Patent number: 10275172
    Abstract: In a method of operating a SSD device, which includes a nonvolatile memory device having a plurality of memory blocks, the plurality of memory blocks is operated in a single level cell (SLC) mode, an access pattern for each of a plurality of data units stored in each of the plurality of memory blocks of the nonvolatile memory device is periodically analyzed, an operation mode of at least one of the plurality of memory blocks is switched to a multi level cell (MLC) mode based on the analysis result, and at least one of data units is moved to a memory block operating in the MLC mode based on the analysis result.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: April 30, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shiva Pahwa, Alex Mohandas
  • Publication number: 20180232144
    Abstract: A storage device may include one or more nonvolatile memory devices and a controller. The nonvolatile memory devices may be configured to store target data. When the number of operations which is performed on the target data is equal to or greater than a first reference value, the controller may be configured to store duplicated data, which is identical to some or all portions of the target data, in the nonvolatile memory devices. When the number of operations performed on the target data becomes equal to or smaller than a second reference value after the duplicated data is generated, the controller may be configured to invalidate the duplicated data.
    Type: Application
    Filed: December 13, 2017
    Publication date: August 16, 2018
    Inventors: Shiva Pahwa, Alex Mohandas
  • Publication number: 20180032275
    Abstract: In a method of operating a SSD device, which includes a nonvolatile memory device having a plurality of memory blocks, the plurality of memory blocks is operated in a single level cell (SLC) mode, an access pattern for each of a plurality of data units stored in each of the plurality of memory blocks of the nonvolatile memory device is periodically analyzed, an operation mode of at least one of the plurality of memory blocks is switched to a multi level cell (MLC) mode based on the analysis result, and at least one of data units is moved to a memory block operating in the MLC mode based on the analysis result.
    Type: Application
    Filed: January 23, 2017
    Publication date: February 1, 2018
    Inventors: Shiva PAHWA, Alex MOHANDAS