Patents by Inventor Alex Ndobe

Alex Ndobe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ORGANIC SPINTRONIC DEVICES AND METHODS FOR MAKING THE SAME
    Publication number: 20140352788
    Abstract: An organic spintronic photovoltaic device having an organic electron active layer functionally associated with a pair of electrodes. The organic electron active layer can include a spin active molecular radical distributed in the active layer which increases spin-lattice relaxation rates within the active layer. The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET device.
    Type: Application
    Filed: August 20, 2014
    Publication date: December 4, 2014
    Inventors: Zeev Valentine Vardeny, Alex Ndobe
  • Organic spintronic devices and methods for making the same
    Patent number: 8841549
    Abstract: An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.
    Type: Grant
    Filed: September 28, 2009
    Date of Patent: September 23, 2014
    Assignee: University of Utah Research Foundation
    Inventors: Zee valentine Vardeny, Alex Ndobe
  • Organic Spintronic Devices and Methods for Making the Same
    Publication number: 20130199601
    Abstract: An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.
    Type: Application
    Filed: September 28, 2009
    Publication date: August 8, 2013
    Inventors: ZeevValentine Vardeny, Alex Ndobe